| Allicdata Part #: | BC638ZL1G-ND |
| Manufacturer Part#: |
BC638ZL1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 60V 0.5A TO-92 |
| More Detail: | Bipolar (BJT) Transistor PNP 60V 500mA 150MHz 625m... |
| DataSheet: |  BC638ZL1G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
| Power - Max: | 625mW |
| Frequency - Transition: | 150MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | BC638 |
Description
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Bipolar transistors, also known as BJT or Bipolar Junction Transistors, are active devices commonly used for switching and amplification in electronic circuits. The BC638ZL1G is an example of a single-base bipolar junction transistor (BJT) designed for enhanced linear operation. This device is well-suited for medium- and low-frequency operations and has the capability to operate in linear mode from 0.2V to 10V.The BC638ZL1G is widely used in applications where high current and low voltage requirements are essential. This device can be found in a variety of consumer electronics such as TVs, DVDs, and radios, as well as in industrial applications such as power supplies, controllers, and amplifiers. Furthermore, this transistor is often used as an interface between logic circuits and discrete components.The BC638ZL1G consists of three main parts, namely the emitter, base, and collector. These three components form the so-called core structure of the transistor and the main current flow between them is created by what is known as the doping effect of the semiconductor material. This effect is obtained by changing the doping levels at each of the three junctions.The working principle behind the BC638ZL1G is based on the fact that a current is induced from the base to the collector when a small amount of current flows through the emitter. The small amount of current, in turn, allows for a larger current from the collector to the emitter.In operation, a small current flows from the emitter to the base of the transistor. This current then produces an induced electric current that flows between the collector and the emitter. This current, known as the gain current, is controlled by the emitter current and the collector-emitter resistance.Moreover, in order to control the gain current, the base-emitter voltage must be adjusted. This is accomplished by manipulating the base current. The base current, combined with the resistor values, results in the overall voltage drops across the base-emitter junction. This effect greatly simplifies BJT operation and makes it possible to obtain the desired collector current, regardless of the emitter current.In summary, the BC638ZL1G is an example of a single-base bipolar junction transistor designed for enhanced linear operation. It is widely used in consumer electronics and industrial applications such as amplifiers, controllers, and power supplies. The device consists of three parts and uses the doping effect of a semiconductor material to induce a flow of current from the base to the collector. The gain of the device is controlled by adjusting the base-emitter voltage, which is done by manipulating the base current.
The specific data is subject to PDF, and the above content is for reference
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