BC636TA Allicdata Electronics
Allicdata Part #:

BC636TATB-ND

Manufacturer Part#:

BC636TA

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 45V 1A 100MHz 1W Thro...
DataSheet: BC636TA datasheetBC636TA Datasheet/PDF
Quantity: 1000
2000 +: $ 0.03195
6000 +: $ 0.02778
10000 +: $ 0.02362
50000 +: $ 0.02084
100000 +: $ 0.01852
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC636
Description

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The BC636TA is a low-cost, high-power NPN silicon epitaxial-base transistor that can be used in a wide range of applications. It is a classic single transistor bipolar junction transistor, or BJT. The device has a high breakdown voltage and a wide range of power dissipation. This makes it an ideal choice for a variety of applications, from high-powered amplifiers to low-power switching circuits.

The device consists of an NPN epitaxial silicon collector, a base, and an emitter. The collector and base are each comprised of an N-type region and a P-type region to create a PN junction. The collector and base regions are connected externally to the device, while the emitter is connected internally. The external connections are used to apply voltage and current to the transistor and to create a current flow that triggers the device’s switching action.

When operating, the transistor acts as a current controlled resistor. When a positive voltage is applied to the base, a current will flow between the emitter and the collector. This current is known as the emitter current and is determined by the base-emitter voltage, which is the voltage of the base relative to the emitter. This current creates a voltage drop across the collector-emitter junction, which reduces the collector voltage. This voltage control then amplifies the current from the small base current to the large collector current. This amplification allows low-power signals to be used to control high-power current.

The BC636TA is commonly used in amplifiers and audio applications. These devices can be used to build high- power audio circuits, such as amplifiers and speakers. The device can also be used in switching circuits and power supplies, where it can be used to chop up a large current source into smaller parts. Because of its high-power dissipation and low-cost, the transistor is also widely used in consumer electronics, such as computers and consumer audio systems.

In addition to the wide range of applications it has been used in, the BC636TA has also been used in a variety of research experiments. In the 1980s, the BC636TA was used in high-gain super-beta research experiments aimed at increasing the gain of a transistor. These experiments helped scientists develop devices with higher power frequencies and improved switching times. This research has led to the development of many modern transistors, including the BC636TA.

Overall, the BC636TA is a low-cost, high-power NPN silicon transistor that has a wide range of applications. It is commonly used in audio and power circuits, and it has been used in various research experiments. Its high-power dissipation makes it an ideal choice for a variety of projects.

The specific data is subject to PDF, and the above content is for reference

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