BC639_D81Z Allicdata Electronics
Allicdata Part #:

BC639_D81Z-ND

Manufacturer Part#:

BC639_D81Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1W Thro...
DataSheet: BC639_D81Z datasheetBC639_D81Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC639
Description

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The BC639_D81Z is one of the most common transistors in the bipolar single category. It is a popular choice for a wide variety of applications, and is known for its reliable performance. The BC639_D81Z has been used in many radio and cellular systems, as well as in industrial, automotive and military applications.

The BC639_D81Z is a bipolar junction transistor (BJT) that has two main parts: the collector and the emitter. In a BJT, the collector is responsible for collecting electrons from the base, and the emitter is responsible for releasing the electrons to the base. The junction between the collector and emitter is called the base and it is formed by doping the semiconductor material with impurities. The base is used to control the current flow between the collector and emitter.

The BC639_D81Z is a general-purpose NPN BJT that can be used for both switching and amplification applications. It has a high current gain which makes it an ideal choice for applications that require a large amount of current to be switched or amplified. The transistor also has a low power dissipation rating, making it suitable for low-power applications. In addition, the BC639_D81Z has a wide gain bandwidth which allows for a wide range of signal frequencies to be amplified or switched.

The operating voltage for the BC639_D81Z ranges from -40V to +40V and the collector-emitter current can range from 0mA up to 500mA. The maximum power dissipation for the transistor is 400mW, making it suitable for low power applications. The BC639_D81Z also has an operating temperature range from -55°C to +150°C, making it suitable for a wide range of applications.

The working principle of the BC639_D81Z can be divided into three main stages. First, when a potential is applied to the emitter-base junction, current charges are produced in the transistor’s internal base region. These charges cause a potential difference between the emitter and the collector. This potential difference causes the electrons to flow, thus creating a current in the transistor. Second, the collector-base junction is forward biased and thus, collector current begins to flow. Finally, the current flowing through the collector is amplified and passed through the transistor’s output circuitry.

The BC639_D81Z can be used in a variety of applications, such as radio frequency amplifiers, audio amplifiers, and voltage regulators. It is also a popular choice for power supplies and motor control circuits, as well as for signal processing applications. The transistor is also suitable for use in telecommunications and high-speed logic circuits. It is a versatile component that is ideal for many applications, due to its reliable performance and wide range of features.

The specific data is subject to PDF, and the above content is for reference

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