BC636 Allicdata Electronics
Allicdata Part #:

BC636-ND

Manufacturer Part#:

BC636

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 45V 1A 100MHz 1W Thro...
DataSheet: BC636 datasheetBC636 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: BC636
Description

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BC636 is an NPN bipolar junction transistor (BJT) device used in a range of applications, such as amplifiers, switches, small sound circuits, and more. Manufactured by STMicroelectronics, BC636 is designed for use in normal and high-speed switching applications. The device operates over a wide range of temperatures, from -55 °C to +150 °C, and is rated for up to 40V of collector-emitter voltage.

The BC636 differs from other BJTs in that its collector-emitter voltage is high enough to handle overvoltage conditions without damage. The device also has an increased collector current carrying capacity in comparison to many other small silicon BJTs. The device features high-frequency operation; it has a high current-gain bandwidth product of 240MHz at minimum Ic, and a high collector current of 0.5A.

In terms of physical construction, the BC636 features a 250 µm high-power multiepitaxial construction in an SOT23 package. The device is already integrated with its own collector-base protection diode and has an operating frequency of 0kHz up to ≈ 300kHz . The power ratings for the device are 20W for the collector at 25°C and 9W for the collector at 125°C.

The BC636 operates in the common-base configuration, and it is designed to function as both a single device and an integrated circuit. The common-base configuration allows the current gain or β-factor to vary as a function of the base current as opposed to the collector current. The device has differentiated current gain between the collector-emitter and the emitter-base gains, which allows it to handle higher voltages.

In terms of its working principle, the BC636 operates according to the same basic principal as other BJTs. It is a unipolar device and it exploits the rectifying behavior of diodes to allow majority carriers to flow through, while blocking minority carriers. The common-base configuration also allows it to function in a variety of points in a circuit, as well as be used in multiple circuit topologies.

In terms of applications, the BC636 is typically used for amplifiers, switches, and small sound circuits, such as headphones and hearing aids. It is also used for keyboard scanning, and as a low distortion output stage. The device can be used in circuits where the low-power needs and high-frequency operation of other BJTs may not be desirable. It is also used in high-power audio and amplifier circuits thanks to its high current capability.

The BC636 is an effective device for a range of applications, thanks to its high voltage and current ratings, and its flexibility in circuits that call for a common-base configuration. It is applicable to a range of setups, from low-power audio and amplification applications to high-power audio, motors, relays, and more.

The specific data is subject to PDF, and the above content is for reference

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