BC637RL1G Allicdata Electronics
Allicdata Part #:

BC637RL1G-ND

Manufacturer Part#:

BC637RL1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 60V 1A 200MHz 625mW T...
DataSheet: BC637RL1G datasheetBC637RL1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BC637
Description

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The BC637RL1G is a high-voltage Silicon NPN Epitaxial Planar, General Purpose Transistor belonging to the Single Bipolar (BJT) transistor family. This device is specifically designed to work in applications requiring up to 500 Volts Vceo. As such, this device can be used in high voltage switching and amplifying applications such as voltage regulators, voltage stabilizers, switch mode power supplies, dc-to-dc convertors, motor speed controllers, amplifiers or other general purpose applications.

This device features an Epitaxial Silicon NPN structure, which is designed to withstand high voltage and high temperature operating conditions. Additionally, its low collector-emitter saturation voltage ensures low power consumption.

The working mechanism of the BC637RL1G transistor is fairly

The specific data is subject to PDF, and the above content is for reference

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