Allicdata Part #: | BC856BW/DG/B3X-ND |
Manufacturer Part#: |
BC856BW/DG/B3X |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS GEN PURPOSE SC-70 |
More Detail: | Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 200m... |
DataSheet: | BC856BW/DG/B3X Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 65V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
Power - Max: | 200mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70 |
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The BC856BW/DG/B3X is a PNP transistor commonly used in modern applications. It is a single-bipolar (BJT) transistor, and is often used in amplifying circuits, pre-amplifying circuits, switching circuits, and other similar applications. The transistor has very low current gain, making it well-suited for use in applications where it is necessary to control a small amount of voltage or current.
The device is easy to use, as it only requires two external connections in order to operate. One lead should be connected to the positive voltage source, and the other lead should be connected to the negative voltage source. The transistor\'s base connection is connected to a control voltage, which will determine the amount of current that flows through the collector-emitter path. As this is a PNP transistor, its base voltage should be higher than its collector voltage. In most cases, the control voltage will be in the range of 0.5 - 4.5 volts.
The BC856BW/DG/B3X has a Wide-Common-Emitter current gain of 200-470. This means that if a control voltage of 1.0VM is applied to the base, the current gain is 470, thus providing a relatively large amplification factor. This makes it ideal for applications that require a significant amount of gain. Additionally, the device has excellent noise-rejection characteristics, which is beneficial for applications that require high accuracy.
The BC856BW/DG/B3X has an operating temperature range of -55°C to 150°C, which is relatively low compared with other similar transistors. However, the device\'s power dissipation ratings are quite low, ranging from 250mW to 600mW, and its maximum collector-emitter voltage is also quite low, at only 300V. Therefore, the device is not suitable for use in high-power applications.
Generally speaking, the BC856BW/DG/B3X is an ideal choice for applications where low power, low voltage, and low current gain are required. It has excellent noise-rejection characteristics, making it well-suited for applications where high accuracy is needed, such as sensor circuits or signal amplifiers. Additionally, the device is relatively easy to use, as it only requires two external connections in order to operate.
The specific data is subject to PDF, and the above content is for reference
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