Allicdata Part #: | BC859CLT1G-ND |
Manufacturer Part#: |
BC859CLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300m... |
DataSheet: | BC859CLT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | BC859 |
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BC859CLT1G transistors are one type of single Bipolar Junction Transistors (BJT). They are mainly used as switching or amplifying devices in various consumer and industrial electronic products. Typically, BC859CLT1G transistors can process a large amount of power and are used for high wattage applications such as AC power conversion, motor power control and high voltage power supplies.
The BC859CLT1G transistor is a PNP device composed of three layers of semiconductor material separated by a thin insulating layer. The base layer is composed of a thin layer of p-type conductive material sandwiched between two n-type conductive layers. When the base layer is negatively charged, a small current is attracted to the emitter and a much larger current is attracted to the collector. This configuration is commonly referred to as an NPN configuration.
The BC859CLT1G transistor is designed to operate when a small voltage or current is applied to its base. This causes the NPN layers to become positively charged and creates a current flow from the emitter to the collector. Thus, when the base voltage is increased, a much larger current passes through the transistor, resulting in an amplified power signal across its terminals. This concept is often referred to as the gain factor of the transistor, which is usually a number between 1 and 10.
The BC859CLT1G transistor is typically used in high wattage applications such as AC power conversion, motor-power control and high voltage power supplies. The transistor works by switching current between the emitter and collector, and provides a controllable boost to the signal. This allows it to process large amounts of power efficiently and with very little heat dissipation.
In addition, the BC859CLT1G can be used as a high-frequency amplifier, as it can switch between two states very quickly, allowing fast frequency response. It is also commonly used for switch-mode power supplies and can be used in combination with other components to build an entire power supply system.
Overall, the BC859CLT1G transistor is an excellent choice for a wide range of power-amplification and switching applications. Its design offers robustness, reliability and cost-effectiveness, and provides a reliable, efficient way to process large amounts of power. It is a great example of the versatility and power of single-BJT transistors.
The specific data is subject to PDF, and the above content is for reference
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