Allicdata Part #: | BC859BLT3G-ND |
Manufacturer Part#: |
BC859BLT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300m... |
DataSheet: | BC859BLT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | BC859 |
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BC859BLT3G is a single bipolar transistor used today in a variety of applications. It is a silicon NPN transistor with a maximum collector-emitter voltage rating of 65V DC, a maximum current gain of 300 and a continuous collector current of 0.2A. In the field of electronics, it is commonly used for logic level interfaces, general-purpose amplifiers, drivers and switching applications.
The "core" part of a single bipolar transistor is made up of three layers of semiconductor material. The semiconductor material used in modern transistors is usually a silicon-germanium (SiGe) alloy. These three layers, also called the base, collector, and emitter, form an "PNP" or "NPN" region at the junction of the top and bottom layers. Depending on whether the top layer is P or N type, the transistor is said to be an NPN or PNP type. In the case of BC859BLT3G, it is an NPN transistor.
The working principle of a single bipolar transistor is based on the idea of controlling the flow of current from its collector to its emitter by making use of the base layer. When the base-collector junction is forward biased, the base layer is supplied with a positive voltage, which causes a current to flow between the collector and the emitter. This current flow is what provides power to the devices in the circuit.
The second type of operation of a bipolar transistor is known as reverse biasing. This occurs when the base layer is supplied with a negative voltage, which then creates an electric field that prevents current flow between the collector and the emitter. This electric field is responsible for turning off the devices in the circuit.
There are many applications that make use of the BC859BLT3G transistor, including small audio amplifiers, logic level interfaces, drivers and switching applications. It is also used in RF design, such as transceivers, as well as in a variety of other applications. By combining it with other components, such as resistors and capacitors, designers can create more sophisticated circuits that can process more complex tasks.
In conclusion, the BC859BLT3G transistor is an extremely versatile component that is used in a wide variety of applications today. Thanks to its wide range of ratings and ability to be used in both forward and reverse biasing modes, it allows designers to create a wide range of devices with varying levels of complexity.
The specific data is subject to PDF, and the above content is for reference
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