Allicdata Part #: | BC859BLT1G-ND |
Manufacturer Part#: |
BC859BLT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300m... |
DataSheet: | BC859BLT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | BC859 |
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BC859BLT1G is a recent development in the transistor technology. As a member of Single Bipolar (BJT) Transistors, it performs an important role in the electronic circuits. This article gives an overview of the application field and working principle of BC859BLT1G, and expands its scope of application.
BC859BLT1G is a high-voltage NPN transistor commonly used in the high-frequency field. It is a small-signal bell amplifier that is used to offer a simple way to amplify low-level signals and increase power output with the highest efficiency. It is also capable of enhancing the performance of a broad range of electronic circuits by increasing the power of microwaves and other high-frequency signals.
The application field of BC859BLT1G is extensive. It plays an important role in a variety of electronic fields such as radio, television, communication and telecommunication. In radio and television, it is often used as an amplifier in order to enhance the quality of audio and video signals. Similarly, in communication field, it serves as an amplifier for sending or receiving very low signals through wireless transmission. In countermeasures, BC859BLT1G is used to protect and improve the security of communication networks.
BC859BLT1G is quite simple in its working principle. It employs a three-layer semiconductor structure made up of emitter (E), collector (C) and base (B). The physical structure of the transistor is akin to an open switch. It is designed to control the output current by controlling the input current. The output current is regulated by an external current applied to the base (control input) which then sets the gain of the transistor.
BC859BLT1G is a greatly versatile device, and its high-voltage performance is quite stable and reliable. For example, it can maintain its stability and performance even when the voltage supplied to its base (B) is significantly varied. Furthermore, compared to other Bipolar Transistor Single devices, BC859BLT1G consumes a relatively lower current, and its noise is minimized.
In conclusion, BC859BLT1G is a high-performing transistor that has been extensively used in the radio, television, communication and countermeasures fields. It is simple in its working principle, yet it provides immense performance in a wide range of applications. Compared to other Single Bipolar Transistors, it operates with a significantly lower supply current and produces the least amount of noise.
The specific data is subject to PDF, and the above content is for reference
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