Allicdata Part #: | BC857BWE6327BTSA1TR-ND |
Manufacturer Part#: |
BC857BWE6327BTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP 45V 0.1A SOT-323 |
More Detail: | Bipolar (BJT) Transistor PNP 45V 100mA 250MHz 250m... |
DataSheet: | BC857BWE6327BTSA1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
Power - Max: | 250mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Base Part Number: | BC857 |
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BC857BWE6327BTSA1 is a single bipolar transistor designed for use in a variety of applications. It is a small signal NPN transistor with a maximum voltage rating of 30V. It is a high gain, low power transistor with a current gain of about 350. The device is split into two parts, the emitter region and the base region. The emitter region contains the emitter and collector connections which enable the transistor to act as an amplifier or a switch in a circuit.
The base region consists of three layers; the collector contact, the base contact, and the substrate. The collector contacts allow current to flow between the emitter and the collector, while the base contact creates an electrical diode which can control the current flow in the transistor by regulating the amount of electrons that pass through it. The substrate layer is an insulator between the base region and the collector which further reduces the current in the device.
In terms of its working principles, BC857BWE6327BTSA1 works by manipulating the current flow in a circuit. When a small amount of current is applied to the base region from an external source, the base contact causes the electrons to move between the collector and the emitter. This causes the collector current to increase, for the collector current is equal to a proportion of the current that was applied to the base. This process of current amplification is used across a wide range of devices such as amplifiers and switches.
Another thing to note is that the current gain of this device is determined by the ratio of the collector current divided by the base current. This means that the current gain is determined by the number of electrons that pass through the base regions. A large number of electrons passing through the base delivers a higher current gain and a lower current gain if there are less electrons passing through. This is why the current gain of BC857BWE6327BTSA1 is quite high as it can handle a large number of electrons passing through it.
Overall, BC857BWE6327BTSA1 is an excellent choice for a variety of applications. It can be used as an amplifier or switch, and its high current gain make it very suitable for these roles. Thanks to its low power usage, the device can be used for a wide range of applications without the need for a large heat sink. Furthermore, its wide voltage rating means it is suitable for use in many applications.
The specific data is subject to PDF, and the above content is for reference
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