Allicdata Part #: | BC859CLT1-ND |
Manufacturer Part#: |
BC859CLT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 300m... |
DataSheet: | BC859CLT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 420 @ 2mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | BC859 |
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.BC859CLT1 is a high-gain, high-output current surface mount transistor designed for use in a wide range of applications. It utilizes bipolar junction transistor (BJT) technology, which has allowed for its compact size, high output current, and high operating voltage. By combining the advantages of BJT technology with the benefits of surface mount transistors, the BC859CLT1 offers superior performance in a variety of applications.
BC859CLT1 belongs to the category of single bipolar junction transistors (BJT). A single BJT consists of a single base-emitter junction surrounded by two collector-emitter junctions. The base typically connects to a circuit control element, such as a voltage or current source, while the emitter and collector are connected to the load or the power source.
The working principle of the BC859CLT1 is based on the same principles of operation of all BJTs. When a voltage is applied between the base and the emitter, electrons from the emitter flow towards the base and an electric current is established between the base-emitter junction. This current is amplified as it passes through the collector and can be used to power a load. The current gain of the BC859CLT1 is specified as hFE=160.
BC859CLT1 is designed for use in a wide variety of applications, ranging from linear and switching applications to power management and drive circuits. Its high gain and high output current make it suitable for switching and driving high-power motes and devices, while its high collector-emitter breakdown voltage and low switching times enable it to be used in high-speed switching applications. Its high current gain and low saturation voltage make it ideal for power management applications, while its low capacitance allows for improved frequency response and low distortion in linear, AC, and audio applications.
BC859CLT1 is a high-performance, high-efficiency transistor, which has been designed to meet the needs of a wide range of applications. Its versatility is enabled by its single bipolar junction transistor technology, which allows for improved performance and reliability over a variety of applications. Thanks to its high gain and high output current, it is one of the most suitable transistors for use in motor and drive circuits, audio amplifiers, and switching circuits.
The specific data is subject to PDF, and the above content is for reference
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