BC859BLT1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	220 @ 2mA, 5V
Power - Max:	300mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	BC859

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BC859BLT1 is a silicon PNP small signal low-power transistor manufactured by Sanyo Semiconductor Company in 3-pin surface-mount DO-213AA package. It is designed for use in general purpose amplifier and switching applications. With a minimum DC collector current capability of 500mA (the maximum DC collector current is 1A), it is suitable for use in Class-B amplifier stages.The BC859BLT1 has a hFE (DC current gain) range of 100 to 700, which makes it suitable for a wide variety of signal amplification applications. It has a maximum operating temperature of 125°C, and a DC collector-emitter breakdown voltage of 40V.The BC859BLT1 is classified as a bipolar junction transistor (BJT). It is a single-pole transistor, meaning it only has two terminals: the collector and the base. The BC859BLT1 has three terminals, however, which include an emitter terminal in addition to the collector and base terminals. The base-to-emitter voltage for the BC859BLT1 is 6V, and the base-to-collector voltage is 20V. When the transistor is used as an amplifier, the base terminal is grounded, and the collector and emitter terminals are used to pass the signal. When the transistor is used as a switch, the base terminal is used to control the flow of current between the collector and emitter terminals.A major advantage of the BC859BLT1 is its low voltage drop. At a collector current of 500mA, the voltage drop across the collector and emitter terminals is 0.20V. This makes it ideal for use in applications where low-power and high-efficiency are critical. The low voltage drop also means that the BC859BLT1 is capable of dissipating a high amount of electrical power. The maximum power dissipation of the BC859BLT1 is 500mW.The BC859BLT1 is a versatile transistor, which makes it suitable for use in many different applications. It can be used for small-signal amplification, for switching, and for providing current regulation. It can also be used as a power amplifier in Class-B amplifier stages, as its minimum collector current is 500mA, while its maximum collector current is 1A.The BC859BLT1 also has a variety of safety features which make it suitable for use in many different applications. Its three terminals are designed to withstanding voltages up to 100V, so it can be safely used in applications where high voltages are present. The maximum operating temperature of the BC859BLT1 is 125°C, and it has a DC collector-emitter breakdown voltage of 40V, so it can handle large amounts of electrical power without risking damage.In summary, the BC859BLT1 is a versatile single-pole transistor with a low voltage drop and a wide range of safety features. It is suitable for a variety of applications, from small-signal amplification to switching and current regulation. Its maximum operating temperature of 125°C, and DC collector-emitter breakdown voltage of 40V, make it suitable for applications where electrical power is a concern.

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