BFG 235 E6327

The BFG 235 E6327 is a General Purpose, High Current NPN Silicon Bipolar Planar RF Transistor. This advanced type RF transistor is designed for high current, high gain, and high switching speed applications, such as radio control systems, boosters and amplifiers, FM radio receivers and mobile radio transmitters. The BFG 235 E6327 also features a low rated collector current (Ic), which helps to minimize the size of the overall circuit. Additionally, it has a high degree of linearity, which increases its performance.

Application Field

The BFG 235 E6327 is most suitable for high current applications involving switching and amplification. The low Ic rating and high linearity make it optimal for a wide variety of applications, including radio control systems, boosters and amplifiers, FM radio receivers, mobile radio transmitters, switched power supplies, motor control circuits, as well as instrumentation and medical applications. The BFG 235 E6327 is also suitable for digital applications with its fast switching speeds.

Working Principle

The BFG 235 E6327 works by transforming a small current from the control element into a large current. This process is known as amplification. In a bipolar transistor the device’s base terminal is the control element that is directly connected to the supplier of current. The collector terminal functions as the output element, enabling the current produced at the base to flow through. The emitter terminal acts as a control element that releases the current in the right direction. This helps minimize the loss of the energy.

The BFG 235 E6327 uses a bipolar type transistor that is specially designed to operate at high switching speeds. The transistor utilizes a voltage-controlled current gain which is dependent on the current flowing through the base. The gain can be adjusted to compensate for losses due to nonlinear electrical characteristics or load conditions. Additionally, the BFG 235 E6327 features a low collector voltage (Vce) drop, which helps reduce power dissipation and enhance the overall operation of the device.

The BFG 235 E6327 is a powerful and efficient RF transistor designed to handle high current, high gain, and high switching speed applications. With its low Ic rating, high degree of linearity, and fast switching speeds, it is suitable for a variety of complex applications, such as boosting and amplifying signals, switching supplies, as well as motor control and instrumentation. Furthermore, its low Vce drop makes it an ideal choice for high current and high switching speed applications.