Allicdata Part #: | BFG520/XR,235-ND |
Manufacturer Part#: |
BFG520/XR,235 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS RF NPN 9GHZ 15V SOT143 |
More Detail: | RF Transistor NPN 15V 70mA 9GHz 300mW Surface Moun... |
DataSheet: | BFG520/XR,235 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.1dB ~ 2.1dB @ 900MHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 20mA, 6V |
Current - Collector (Ic) (Max): | 70mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-143R |
Supplier Device Package: | SOT-143R |
Base Part Number: | BFG520 |
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Transistors – Bipolar (BJT) – RF
A BFG520/XR,235 is a transistor that has been designed specifically for radio frequency applications. It is an NPN type low-noise RF transistor, designed mainly to amplify signals in the extremely short-wave and microwave range. The device utilizes a combination of high-frequency, wide-band design techniques to offer superior performance in high- and low-level amplifying applications, including adaptive type amplifiers and linear amplifiers for radio receivers.
The main characteristics that make the BFG520/XR,235 well suited for use in RF circuits are its wide transition frequency, excellent thermal stability, high breakdown voltage and wide dynamic range. The device can operate at frequencies of up to 20 GHz, making it ideal for use in microwave transmitters and receivers.
The BFG520/XR,235 has two active terminals, collector and emitter, and two base contacts, called the gate and the source. The transistor amplifies current or voltage depending on the characteristics of the input signal, which is applied between the gate and the source. The gate-source voltage (VGS) must exceed a certain threshold level, known as the cut-off voltage, before the transistor will begin to conduct. When the VGS exceeds this threshold voltage, the transistor is said to be in saturation. When the VGS falls below this voltage, the transistor is said to be in cut-off.
The working of BFG520/XR,235 can be better understood by examining its basic characteristics. Like all transistors, it is typically characterized by its gain (beta), noise figure, input and output impedance, collector-emitter capacitance, and power rating. Its gain, measured in decibels (dB), is the ratio of output signal voltage to input signal voltage. It has a low noise figure, which is the signal-to-noise ratio of the amplifier, expressed as the ratio between signal gain and noise gain. The input and output impedances of the transistor depend on the source and load resistances, as well as the transistor\'s particular design. Its collector-emitter capacitance is the parasitic capacitance between the collector and emitter, expressed as a function of frequency. Finally, the power rating is the amount of power, usually expressed in watts, the transistor can handle.
The BFG520/XR,235 is primarily used in radio frequency applications, such as wireless communication systems, digital and analog microwave links, receivers and satellite transponders. It is a reliable and powerful device designed to provide high-frequency amplification of RF signals and is an excellent choice for any RF system designer.
The specific data is subject to PDF, and the above content is for reference
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