Allicdata Part #: | BFS469L6E6327-ND |
Manufacturer Part#: |
BFS 469L6 E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR RF TWIN NPN TSLP-6 |
More Detail: | RF Transistor 2 NPN (Dual) 5V, 10V 50mA, 70mA 22GH... |
DataSheet: | BFS 469L6 E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max): | 5V, 10V |
Frequency - Transition: | 22GHz, 9GHz |
Noise Figure (dB Typ @ f): | 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz |
Gain: | 14.5dB |
Power - Max: | 200mW, 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 130 @ 20mA, 3V / 100 @ 5mA, 3V |
Current - Collector (Ic) (Max): | 50mA, 70mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-XFDFN |
Supplier Device Package: | TSLP-6-1 |
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BFS 469L6 E6327: Application Field and Working Principle
BFS 469L6 E6327 transistors, also known as Bipolar Junction Transistors (BJTs), are widely used in Radio Frequency (RF) applications across numerous industries. This type of transistor is designed to incorporate precision radio, linear and RF components as well as other technologies into a single package. Additionally, they offer significant gain and linearity at profitable costs. This makes them ideal for RF applications where accuracy, reliability and performance of components are essential.
The BFS 469L6 E6327 transistor is a three-pin device utilizes NPN full-match technology that enables precise output and extends frequency spacing. This makes them suitable for a broad range of RF applications such as RF amplifiers, receivers, transmitters and high-frequency power amplifiers.
They are also capable of handling a maximum collector voltage of 60 volts with a collector current of 180 mA. Additionally, their maximum power dissipation is 500 mW in an operating junction temperature range of -65°C to +150°C.
The main components of the BFS 469L6 E6327 are the Base, the Emitter and the Collector.
The Base serves as the input of the transistor. It is used to control the current flow from the Emitter to the Collector.
The Emitter is the output of the transistor, which serves as the source of electrons.
The Collector is typically connected to the power supply and is used to collect electrons.
The working principle of the BFS 469L6 E6327 is based on the PN junction theory. The Base-Emitter junction is biased in forward direction, with the Collector-Base junction being reverse biased. When the Base is connected with a small current, it controls the larger Collector current, providing current amplification.
In summary, BFS 469L6 E6327 transistors offer versatile input, output and intermediate stages in a single package, which makes them ideal for RF applications. They feature precise output, extended frequency spacing and excellent price-to-performance ratios. This makes them an ideal choice for broadcasters, broadcasters and other high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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