BLF244,112 Allicdata Electronics
Allicdata Part #:

568-2411-ND

Manufacturer Part#:

BLF244,112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET NCHA 65V 17DB SOT123A
More Detail: RF Mosfet N-Channel 28V 25mA 175MHz 17dB 15W CRFM4
DataSheet: BLF244,112 datasheetBLF244,112 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: N-Channel
Frequency: 175MHz
Gain: 17dB
Voltage - Test: 28V
Current Rating: 3A
Noise Figure: --
Current - Test: 25mA
Power - Output: 15W
Voltage - Rated: 65V
Package / Case: SOT-123A
Supplier Device Package: CRFM4
Description

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Transistors - FETs, MOSFETs - RF
BLF244,112 is a RF metal oxide semiconductor field effect transistor (MOSFET). It offers reliable performance and is ideal for use in high speed pulsed applications. It is a high voltage transistor with a maximum operating voltage of 12 volts and a maximum operating frequency of 12 MHz. The BLF244,112 has an operating temperature range of -40°C to +105°C.The BLF244,112 is a typically used in commercial, industrial, and consumer device applications such as motor control, surge protection, and communications switching and can be used in short distance, high speed communications and data processing applications.One of the most useful features of the BLF244,112 is its very low on-state resistance. Low on-state resistance is often desirable in applications that need to control a large amount of current. The low on-state resistance also helps reduce heating, resulting in a device with a high operating efficiency.The BLF244,112 operates by relying on metal oxide as the main semiconductor material. When an electric field is applied, metal oxide semiconductor (MOS) capacitors become polarized and allow current to flow across their terminals. The electric field is generated by a voltage applied to the transistor’s gate, and the resulting electric field creates a channel in the metal oxide, allowing electrons to flow from the source to the drain without creating any resistance.At the same time, the resistance in the channel can be varied by constantly adjusting the level of the electric field, which is done using the transistor’s gate control voltage. This enables the device to be used as a variable resistor, making it useful in a variety of applications such as amplifying audio signals and controlling the speed of motors.The BLF244,112 is considered to be an ideal choice for high-frequency, high-voltage applications such as power converters and switching applications. It has a maximum operating voltage of 12 volts and can operate at frequencies up to 12 MHz, making it suitable for use in these applications. The device is also known to have extremely low on-state resistance, making it an efficient choice in many applications.Overall, the BLF244,112 is an ideal choice for a variety of applications such as motor control, surge protection, audio amplification, and data processing. Its low on-state resistance, compact size, and high-frequency rating make it a versatile and reliable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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