Allicdata Part #: | BS107AGOS-ND |
Manufacturer Part#: |
BS107AG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 0.25A TO-92 |
More Detail: | N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole ... |
DataSheet: | BS107AG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.4 Ohm @ 250mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 250mA (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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BS107AG Application Field and Working Principle
The BS107AG is a high-performance, surface-mount, high-density N-channel MOSFET, commonly used in an array of electronic applications. It features advanced trench technology and has superior erosion resistance. This allows it to be ideal for high frequency, high current, and low resistance circuits. The BS107AG is designed to work in the low to medium power range and typically requires only a nominal gate voltage to work properly.
Application Field
The BS107AG is capable of controlling high-current circuits and operating at high frequencies, which makes it suitable for a wide range of applications. Many of these involve switching applications, such as digital circuits and power systems, where it can be used to turn off and on different devices. It can also be used in linear circuits such as amplifiers and filters. It can also be used for power distribution, since its low resistance characteristics make it suitable for these applications. Additionally, the BS107AG can handle higher temperature operations, making it suitable for temperature applications such as temperature sensing, temperature control, and high temperature sensing applications.
Working Principle
The BS107AG is an N-channel MOSFET with a structure based on bipolar transistor. In this kind of device, the n-type semiconductor region is connected to the source of the device, while the p-type region is connected to the drain of the device. In addition to this, a gate region is also present, and its voltage controls the current flowing between the drain and the source. When a positive voltage is applied to the gate, electrons are attracted to the gate and form an electric field between the gate and the channel. This increases the chance of electrons to pass through the channel, thereby allowing current to flow from the drain to the source.
When the gate voltage is decreased, the electric field between the gate and the channel is weakened, thus reducing the current flowing between the drain and the source. In this manner, the BS107AG works in a very similar manner to a regular transistor and can therefore easily be integrated into different systems. The main difference between a regular transistor and the BS107AG is that the BS107AG can handle higher current with a lower gate voltage.
Conclusion
The BS107AG is an advanced high-density N-channel MOSFET that is capable of controlling high-current circuits, operating at higher frequencies and providing superior erosion resistance. It is suitable for a wide range of applications, including switch circuits, linear applications, power distribution and temperature applications. It can work in a similar manner to a regular transistor, but can handle higher current with a lower gate voltage.
The specific data is subject to PDF, and the above content is for reference
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