BS107ARL1G Discrete Semiconductor Products

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BS107ARL1G is a N-channel enhancement mode Field effect transistor (FET) which is commonly used in various applications. It is one of the many available enhancements mode FETs, especially those equipped with an MOSFET (metal oxide semiconductor field effect transistor) structure. It is capable of both high conductivity and low on-state resistance, and is usually found in small-to-medium power electronics systems and control circuits.

BS107ARL1G is a single, N-channel MOSFET that comes equipped with high current handling capability and low on-state resistance. The BS107ARL1G FET has been designed with a number of features to make it suitable for task-specific applications and to make it more reliable in any usage environment. It has an avalanche energy rating of 10 V and a high breakdown voltage of 100 V, making it suitable for use in a variety of power applications.

The working principle of a field effect transistor is based on the principle of electrostatics. A voltage applied to its gate terminal changes the threshold voltage level to the source terminal and creates an inversion layer at its source region. This inversion layer reduces the resistance between the source and drain terminals, resulting in current flow through the device.

The BS107ARL1G is primarily used in a variety of control and switching applications, such as pulse width modulation, variable frequency drives and power supplies. It can be used in a variety of industrial processes, such as temperature and pressure control and motor speed control. Additionally, it can be used in consumer electronics applications, such as air conditioning systems and home appliances.

BS107ARL1G also offers low capacitance and low input capacitance between its gate and source terminals. This ensures that the device does not draw excessive current from the power supply, which can cause instability in the application circuit. Also, the low on-state resistance of the BS107ARL1G provides efficient energy conversion, which results in longer operating times and lower power consumption.

In addition to its wide range of applications, the BS107ARL1G FET also offers excellent ESD (Electrostatic Discharge) protection. Its internal ESD protection provides protection from electrostatic shock and can help maintain device reliability and reduce material costs. This combination of features make it an ideal choice for many electronic applications.

The BS107ARL1G FET offers a wide use range for enhanced power supply with low on-state resistance. Its flexible design and high reliability make it suitable for many different applications. Overall, it is ideal for applications that require high current density, low on-state resistance, and high breakdown voltage rating.

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