BS107PSTOB Allicdata Electronics
Allicdata Part #:

BS107PSTOB-ND

Manufacturer Part#:

BS107PSTOB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 200V 0.12A TO92-3
More Detail: N-Channel 200V 120mA (Ta) 500mW (Ta) Through Hole ...
DataSheet: BS107PSTOB datasheetBS107PSTOB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 5V
Package / Case: E-Line-3
Supplier Device Package: E-Line (TO-92 compatible)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: --
Series: --
Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BS107PSTOB is a field-effect transistor (FET) that is made using complementary metal-oxide-semiconductor (CMOS) process technology. It is a single type of FET that is widely used in many applications that require a low-noise, high-gain field-effect transistor such as data networks, medical devices and instrumentation. The characteristics of these transistors make them ideal for these types of applications.

Features of BS107PSTOB

The BS107PSTOB is a high voltage transistor with a drain-gate voltage of -20V and a drain current of -1.3A, making it suitable for use in a variety of designs. It is a low-noise field-effect transistor (FET) and features a high gain of up to 30 dB. It also has a low frequency response and fast switching capabilities. This makes it excellent for applications with fast switching frequencies, such as high speed data networks, medical devices and instrumentation.

Working Principle

The BS107PSTOB is a metal-oxide-semiconductor FET (MOSFET) with an insulated gate. This allows it to act as an electrical switch controlling the flow of current. When theGate voltage is above a certain threshold the BS107PSTOB will turn on and the current will flow from the source to the drain. The BS107PSTOB is a voltage-controlled device, meaning that its performance characteristics are depended on the applied voltage. This makes it an ideal choice for various types of applications where voltage control is necessary.

Applications

The high voltage and fast switching characteristics of the BS107PSTOB make it an ideal choice for many applications. It is widely used in data networks, instrumentation, and medical devices where a high gain, low-noise and fast switching FET is needed. It is also used in optical communication systems, automotive switchgear, and consumer electronics.

Conclusion

The BS107PSTOB is a single FET type field-effect transistor that is made using CMOS process technology. It has a high drain-gate voltage of -20V and fast switching capabilities, allowing it to be used in a variety of applications such as data networks, instrumentation and medical devices. The high gain and low-noise capabilities of the BS107PSTOB also make it an ideal choice for optical communication systems, automotive switchgear, and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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