BS107PSTZ Discrete Semiconductor Products

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BS107PSTZ is a type of metal oxide semiconductor field effect transistor (MOSFET). The transistor is a single-source, laterally diffused metal oxide semiconductor (LDMOS) device. It is designed to provide extremely high linearity, low on-resistance, high voltage breakdown, and an immunity to latchup.The BS107PSTZ is typically used as a power amplifier or switch in RF applications such as cellular base stations and wireless communication systems. It can also be used in other power applications due to its low on-resistance and high voltage breakdown ratings.The BS107PSTZ is a two terminal device that operates in the enhancement mode. It consists of a semiconductor substrate, two source and drain contacts, a gate, and a gate oxide layer. When a voltage is applied to the gate contact, it creates an electric field in the gate oxide layer which modulates the conductivity of the semiconductor channel between the two source and drain contacts.When no voltage is applied to the gate, the channel is in the OFF state and no current flows between the two terminals. When a voltage is applied, the channel is turned on and current is allowed to flow. The amount of current that flows through the channel is determined by the gate voltage, the gate length, and the width of the channel.The BS107PSTZ is a low voltage MOSFET and is designed for operation at supply voltages of 3.3 V or less. It has a low threshold voltage (Vth) of only 0.4V and a low input capacitance of about 6 pF. The breakdown voltage rating is high at 400 V. The on-resistance rating is very low and can be as low as 0.07 ohms.The BS107PSTZ is also designed for high linearity, with excellent third-order intermodulation distortion (IM3) performance of -71dBm at 0.1 dB compression. The device also features excellent thermal performance, with a maximum junction temperature of 150°C and a very low thermal resistance.The BS107PSTZ is a versatile device that is suitable for a wide range of applications, such as power amplifier designs, high voltage switches, and RF circuit designs. Its low input capacitance and low on-resistance make it suitable for high frequency switching applications and its high linearity makes it ideal for power amplifier designs requiring linearization. Its immunity to latchup make it safe for use in safety-critical applications.The BS107PSTZ is an ideal choice for any application where high performance is required in a low voltage, low power environment. It is an ideal device for designers looking to use MOSFET technology to achieve high performance and low power consumption in their designs.

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