BS108ZL1G Discrete Semiconductor Products |
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| Allicdata Part #: | BS108ZL1GOSTB-ND |
| Manufacturer Part#: |
BS108ZL1G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 0.25A TO-92 |
| More Detail: | N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole ... |
| DataSheet: |  BS108ZL1G Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 350mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8 Ohm @ 100mA, 2.8V |
| Drive Voltage (Max Rds On, Min Rds On): | 2V, 2.8V |
| Current - Continuous Drain (Id) @ 25°C: | 250mA (Ta) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Box (TB) |
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A BS108ZL1G is a semiconductor, metal-oxide-semiconductor field-effect transistor (MOSFET) of the single type. It is used in a variety of electronic applications.
MOSFETs are a type of field-effect transistor (FET) which differ from other FETs since electrons do not have to pass through the gate in order to influence the current passing through the device. This makes them suitable for applications requiring high frequency operation. Additionally, MOSFETs are capable of switching inputs with microsecond speeds, allowing for faster and more efficient control.
The BS108ZL1G is specifically designed for use in low-noise, high-frequency applications. It has a maximum working frequency of up to 400 MHz, making it ideal for high-speed operations. Additionally, its low capacitance ensures minimal noise when switching signals and it is capable of low power consumption, making it a suitable choice for battery-powered applications.
The BS108ZL1G features an N-channel, which means that an electric current flows from the source to the drain when the gate is activated. This means that when the gate is not activated, the current is blocked. This makes the device suitable for analog switch applications, as well as power MOSFETs, high-efficiency amplifiers and RF applications.
The BS108ZL1G also features a very low ‘on’ state resistance of 0.064 ohms, allowing for more current conduction with less power dissipation. This makes it a great choice for energy-saving applications.
In conclusion, the BS108ZL1G is an ideal choice for a wide variety of applications, ranging from high-frequency switching to power MOSFETs and RF applications. With its low on-state resistance, fast switching speeds, and low power consumption, the BS108ZL1G is a great choice for any application requiring a reliable, energy-efficient MOSFET.
The specific data is subject to PDF, and the above content is for reference
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