Allicdata Part #: | BS107P-ND |
Manufacturer Part#: |
BS107P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 200V 120MA TO92-3 |
More Detail: | N-Channel 200V 120mA (Ta) 500mW (Ta) Through Hole ... |
DataSheet: | BS107P Datasheet/PDF |
Quantity: | 30195 |
Rds On (Max) @ Id, Vgs: | 30 Ohm @ 100mA, 5V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Vgs(th) (Max) @ Id: | -- |
Series: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 2.6V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 120mA (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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Nowadays, everyone is familiar with FETs, MOSFETs, and single transistors. But, how does the BS107P application field and its functioning principle work? This article explains in detail the working principle of the BS107P application field and how it works.
The BS107P application field is a single-transistor (MOSFET) series designed with a high breakdown voltage rating, fast switching response, high frequency operation, and low gate source capacitance. The working principle of this transistor is based on the fact that the gate of the MOSFET is open or conducts current depending on the voltage present at the gate. The gate voltage adjusts the resistance of the N-Channel MOSFET, or the conductivity of the P-Channel MOSFET.
The Flow of Current through the BS107P follows the same principle of operation. When the gate voltage is increased, the MOSFET changes from a non-conducting state to a conducting state. The current flow then begins to increase, and the gain of the transistor starts to increase. The gate voltages, gate current and the gate-source voltage all affect the performance of the transistor.
The gate voltages are varied to adjust the gain and cutoff frequency of the circuit. In order to achieve the desired results, the gate currents should be higher than the gate-source voltages. This is called the "bias voltage". If the bias voltage is too low, then the MOSFET will remain non-conducting even when the gate voltage is increased, and the transistor will be incapable of operating at its optimal state. On the other hand, if the bias voltage is too high, the transistor would become too "hot" and cause premature device failure.
The BS107P can handle large power and output signals, so it is suitable for applications that require linearity, stability, and high-power delivery. It is a popular choice for use in linear power supplies, motor controllers, power amplifiers, and digital logic and interface devices. The BS107P application field can also be used in medical and aerospace applications, where high-power, fast switching is desired.
The operating characteristics of the BS107P include; drive current, trigger current, collector current, saturation voltage, cut-off voltage, break down voltage, and pinch-off voltage. Besides the standard characteristics, some other characteristics like; breakdown voltage, stability and noise characteristics are also taken into consideration when used in any application. The drive current and trigger current are immune to large fast transients. The collector current and saturation voltage are stable up to 100MHz. The cut-off voltage and break down voltage are broadly adjustable.
The BS107P application field is available in a variety of package types such as DIP, SMD, TO-220, and TO-3P. It also offers a wide range of features such as temperature range, input/output impedance, and voltage ratings in different packages. The BS107P application field has evolved from a simple one-port amplifier to a multi-port amplifier with input antennas, output antennas, selector switching coils, and integration of amplification circuit modules.
In summary, the BS107P application field is not only useful because of its fast switching time but also because of its linearity, stability and high power delivery. Its operating characteristics make it an ideal choice for various applications, especially those that require high frequency operation. Its variety of package types, as well as its wide range of features make it a desirable choice in the MOSFET and single-transistor market.
The specific data is subject to PDF, and the above content is for reference
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