BSP 51 E6327 Allicdata Electronics
Allicdata Part #:

BSP51E6327TR-ND

Manufacturer Part#:

BSP 51 E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS NPN DARL 60V 1A SOT-223
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 1A 2...
DataSheet: BSP 51 E6327 datasheetBSP 51 E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.5W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Base Part Number: BSP51
Description

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BSP 51 E6327 is a part of transistors - bipolar (BJT) - single. This bipolar junction transistor is a great choice when looking for an application in power switching and amplifier designs. The main advantages of this transistor is it’s high breakdown voltage, low capacity and high power rating. It is designed with two different packages— small outline transistor package and minidip package.

The main use of this bipolar junction transistor is for power output stages. Depending on the requirements, this device can be used for audio power applications and can also be used for high current switching applications. The common applications include amplified circuit designs such as audio amplifiers and power switching circuits.

The working principle of BSP 51 E6327 is based on the concept of base-emitter a diode junction which is used to control the amount of current flowing through a device. It is a three terminal device which includes an emitter, base, and collector. When the voltage applied to the base of the device is higher than the emitter voltage, the currents flow out of the base and into the collector and through the emitter.

The device possesses three basic characteristics: full current gain, full voltage gain and transconductance. Full current gain is the amount of current that is increased when the input current is increased. Full voltage gain is the ratio between the input and output voltages. Transconductance is the ratio between the changes in current when the voltage is changed.

The current gain of BSP 51 E6327 depends on the parameters of the device. It can range from 15 to 20 with the transistor operating in the range from -55 to 125 degrees Celsius. The voltage gain can be as high as 60V and it can also vary with the transistors operating temperatures. The transconductance ranges from 0.03 to 0.07 mA/V.

Since this transistor is used mainly in power output stages, careful consideration should be taken when using it as there are certain aspects of the device that should be taken into account in order to prevent it from failing. For example, it should be kept in mind that the base voltage should not exceed the maximum rating, otherwise, the device will get damaged from excess heat.

In summary, BSP 51 E6327 is an excellent choice when looking for an application in power switching and amplifier designs. The main advantages of it include its high breakdown voltage, low capacity and high power rating. However, the device should be handled carefully to prevent it from failing.

The specific data is subject to PDF, and the above content is for reference

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