Allicdata Part #: | BSP320SH6327XTSA1TR-ND |
Manufacturer Part#: |
BSP320SH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 2.9A SOT223 |
More Detail: | N-Channel 60V 2.9A (Tj) 1.8W (Ta) Surface Mount PG... |
DataSheet: | BSP320SH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 20µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | SIPMOS™ |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A (Tj) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSP320SH6327XTSA1 is a high performance n-channel MOSFET transistor, manufactured by STMicroelectronics. It is suitable for applications in the automotive industry as a switching device or a driver for power-amplifiers, and it provides an ideal electromechanical solution for applications requiring high-performance and low-cost, low-noise electronic products.
The BSP320SH6327XTSA1 is comprised of an integrated gate with a single drain and source as well as an internal gate-source/gate-drain connection. This construction ensures optimized conduction properties and integrated voltage protection. The device is capable of handling high currents, up to 200 amperes and is also optimized for switching speed, providing up to 2 nanoseconds for the on-state transition time.
The working principle of the BSP320SH6327XTSA1 can be best described as the application of a potential difference between the gate and the source of the MOSFET which creates an electric field leading to a depletion zone at the MOSFET\'s surface. This depletion zone blocks the flow of current and reduces the voltage appearing between the source and the drain of the device. This effect can be changed by applying an additional voltage-bias between the gate and the source of the device, altering the size of the depletion zone and thus allowing or preventing current flow.
The BSP320SH6327XTSA1 is particularly suited for hybrid and fully electric vehicle applications, as well as automotive audio applications such as amplifiers, as it is designed to withstand temperatures up to 150 degrees Celsius. With its integrated gate and low on-state resistance of 0.03 Ohm, the BSP320SH6327XTSA1 provides a perfect solution for demanding applications.
Overall, the BSP320SH6327XTSA1 is an important part of the automotive digitalization and electrification trend, providing an optimized solution for applications that require high performance and low cost. Its robust construction combined with its low on-state resistance and switching speed make it an ideal solution for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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