BSP32,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-5489-2-ND |
Manufacturer Part#: |
BSP32,115 |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 80V 1A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1A 100MHz 1.3W Su... |
DataSheet: | BSP32,115 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.16742 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 100mA, 5V |
Power - Max: | 1.3W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | BSP32 |
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BSP32,115 transistors are a type of single bipolar junction transistors (BJT). They are one of the most commonly used transistors in today’s electronics world. They are small and low cost components which make them ideal for most electronic projects. In this article we will discuss the application field and working principle of the BSP32,115 transistor.
BSP32,115 transistors have a wide variety of applications, ranging from digital logic applications to light emitting diode (LED) lighting. In digital logic applications the transistor is usually used as an amplifier or switch in order to drive the signals from the digital components. In LED lighting applications the transistor is used to increase or decrease the output current of the LED array in order to change the brightness of the light. In both applications the transistor is used to modify the current flow in order to achieve the desired result.
The BSP32,115 transistor has three connections – the base, the collector and the emitter. The base is the central connection where the input voltage is applied. The collector and emitter are used to control the current flow within the transistor.
The working principle of BSP32,115 transistors is called base-emitter junction bipolar effect. This means that when a voltage is applied to the base connection, it creates an electric field between the emitter and collector. This electric field creates a junction between these two connections which allows the current to flow between them. The amount of current that can flow is determined by the current gain of the transistor, which is referred to as the hFE value.
The BSP32,115 is considered a general-purpose transistor and can be used in many different applications. It is a low power device, with a maximum collector-emitter voltage of 15 volts and a collector-emitter current of 1A. It can be used to switch high voltages, as well as low-level digital signals.
As far as electrical parameters are concerned, the BSP32,115 has a gain-bandwidth product of 250MHz and a reverse current of 1uA at room temperature. The maximum collector current is 2A, with a maximum collector dissipation of 1W. This device is capable of operating at up to 85C, with a maximum power dissipation of 10W. The device is given an HFE value of between 80 and 140, depending on the type of application.
As we have seen, the BSP32,115 is a versatile transistor with a wide range of applications. Due to its excellent electrical performance, it is suitable for a variety of applications including switching, driving LEDs, amplifying low-level signals, and more. Furthermore, it is small and low cost making it ideal for many types of electronics projects.
The specific data is subject to PDF, and the above content is for reference
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