
Allicdata Part #: | BSP60E6327HTSA1TR-ND |
Manufacturer Part#: |
BSP60E6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP DARL 45V 1A SOT-223 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 45V 1A 2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 1.8V @ 1mA, 1A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 500mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Base Part Number: | BSP60 |
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BSP60E6327HTSA1 is a type of Transistors - Bipolar (BJT) - Single. It can be used for different applications such as power amplifier, motor control, and relay drive. It is also suitable for switching applications. BSP60E6327HTSA1 has a robust design and excellent characteristics.
As a single transistor, BSP60E6327HTSA1 can be used as a switch or a transistor amplifier. It has an H-type Silicon transistor structure and is a NPN type of transistor. Its collector current of 150 mA, can provide a power dissipation of 4.7 W when used as an amplifier. Its maximum collector-base voltage rating is 80 V and its collector-emitter voltage rating is 65 V. Its operating temperature range is from -55 to +150 degree Celsius.
In order to understand the application field and working principles of BSP60E6327HTSA1, it is important to understand the construction and operation of a single transistor. The most common type of transistor is the Bipolar Junction Transistor (BJT). A BJT consists of three regions called the base, collector and emitter, which are connected by three leads. It is constructed from two PN junctions that are connected together, and an insulated gate provides bias control to the base junction.
When an electrical signal is applied to the base, it turns the transistor on and off, allowing it to control the amount of current in the collector-emitter circuit. The operating principle of a BJT is based on the increase or decrease in the current flowing through the transistor when it is turned on or off. When the base voltage is increased, a large current flows through the collector and emitter, and when it is decreased, there is little or no current flowing.
BSP60E6327HTSA1 is suitable for applications such as power amplifier, motor control, and relay drive. As a single transistor, it can be used in switching applications as well. For example, it can be used in a push-pull circuit, where it is switched on and off to control the current in the circuit. It can also be used in Darlington pairs, where two transistors are connected to form a high-current transistor amplifier.
BSP60E6327HTSA1 is a type of Transistor that is suitable for a variety of applications. It is robust and has excellent characteristics. It can be used as a power amplifier, motor control, and relay drive applications, or for switching applications such as push-pull circuits and Darlington pairs. The operating principle of BSP60E6327HTSA1 is based on the increase or decrease in the current flowing through it, when it is turned on or off.
The specific data is subject to PDF, and the above content is for reference
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