BSP373NH6327XTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSP373NH6327XTSA1TR-ND |
Manufacturer Part#: |
BSP373NH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 1.7A SOT-223 |
More Detail: | N-Channel 100V 1.8A (Ta) 1.8W (Ta) Surface Mount P... |
DataSheet: | BSP373NH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 218µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 265pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 240 mOhm @ 1.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Transistors - FETs, MOSFETs - Single
BSP373NH6327XTSA1 transistors are primarily used to switch power in nanoelectronics components. They are small, contain a single gate, and can be used to construct very fast switching electronic networks. They are connected close to the power source in order to control current flow between two or more electrical elements.
BSP373NH6327XTSA1 transistors typically have a single on/off switch which offers a low impedance or resistance when the switch is activated and a high resistance when it is not. This prevents electrical energy from flowing directly from the power source to the load, enabling efficient and controllable power management.
BSP373NH6327XTSA1 has an extended drain temperature range, enabling a broad range of operating temperature from –40°C to +150°C, making them suitable for a wide variety of applications. This transistor offers reduced inductance and capacitance, faster switch times and improved gate-source capacitance, allowing it to operate with higher currents and higher frequencies.
The BSP373NH6327XTSA1 is widely used in automotive electronics, audio power amplifiers, DC-DC converters, and other high-power applications. It is also used in high-frequency radio frequency power amplifiers, power switching circuits, and other circuit applications that require fast switching times and low power dissipation.
The BSP373NH6327XTSA1M is a MOSFET (metal-oxide-field transistor) that uses a gate to control the electrical properties of its switching channel. The gate is connected to the source, and when a voltage is applied to the gate, it creates a field. This field changes the resistance of the channel and allows current to flow between the source and the drain. The greater the bias voltage applied to the gate, the greater the resistance of the channel.
The BSP373NH6327XTSA1 is a n-Channel Enhancement-Mode MOSFET, meaning it conducts current when the gate-source voltage is positive. In other words, when the gate is negative with respect to the source, the resistance of the channel increases, preventing current transfer. When the gate-source voltage turns positive, the transistor is in its turned-on state, allowing current transfer between its source and drain terminals.
The proper use of BSP373NH6327XTSA1 requires a complete understanding of the voltage and current needs of the application. In most cases, it is best to work with a professional engineer to select the best transistor for the application. Because transistors are too small to physically inspect and test before use, selecting the right specifications is essential for optimal results.
The specific data is subject to PDF, and the above content is for reference
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