BSP317PH6327XTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSP317PH6327XTSA1TR-ND |
Manufacturer Part#: |
BSP317PH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 250V 0.43A SOT223 |
More Detail: | P-Channel 250V 430mA (Ta) 1.8W (Ta) Surface Mount ... |
DataSheet: | BSP317PH6327XTSA1 Datasheet/PDF |
Quantity: | 10000 |
Vgs(th) (Max) @ Id: | 2V @ 370µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 262pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15.1nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 430mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 430mA (Ta) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSP317PH6327XTSA1 is a N-channel enhancement mode Field-Effect Transistor (FET), also known as a MOSFET, belonging to the current crop of high-density small-signal transistors. It is considered one of the most popular modern FETs and a very common choice for low-voltage high-current applications. This transistor is suitable for a variety of tasks, but the specific application field and working principle of the BSP317PH6327XTSA1 will be explored in greater detail in this article.
Application Field
The BSP317PH6327XTSA1 can be used in countless applications, especially in the area of low-voltage and high-power supply. Some of the most common uses are in the areas of audio, telecommunications, computer and industrial systems. This transistor is also used commonly in automotive applications, such as engine control, braking systems, fuel injection and other fast switching applications. Additionally, it is ideal for use as a power amplifier, in pre-amplifiers, as a buffer amplifier and in integrated power supplies, among many other common uses.
Working Principle
The BSP317PH6327XTSA1 MOSFET is an enhancement type MOSFET, meaning that it operates with a zero gate bias and is dependant on the voltage between Drain and Source, as well as the temperature of the system itself. When the drainage (D) and source (S) terminals are both connected and the proper power is applied to the gate (G), the drain current (ID) will flow and the transistor will be “on”. The Drain and Source have a voltage drop of around 3V and flow, and both turn-on and turn-off rapidly due to their ESD protection. FETs are controlled by the internal gate capacitance and resistance, as well as the external elements. With this transistor, the internal threshold voltage is 0.2V, while the maximum drain current is 100mA. The threshold voltage, drain current and power handling must be considered carefully to ensure that the transistor works properly and operates in an efficient manner.
Conclusion
The BSP317PH6327XTSA1 is a modern N-channel enhancement mode Field-Effect Transistor (FET), also known as a MOSFET, and it is currently one of the most popular and widely used transistors. Its applications include telecommunications, computers, audio equipment and many other areas. It has a zero gate bias, works on a voltage between Drain and Source, and requires only a small voltage drop and drain current. Its internal threshold voltage is 0.2V and its maximum drain current is 100mA, which must be considered when designing power supplies, amplifiers, and any other applications.
The specific data is subject to PDF, and the above content is for reference
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