
Allicdata Part #: | BSP62H6327XTSA1-ND |
Manufacturer Part#: |
BSP62H6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS PNP DARL 80V 1A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 80V 1A 2... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.8V @ 1mA, 1A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 2000 @ 500mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Base Part Number: | BSP62 |
Description
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The BSP62H6327XTSA1 is a type of transistor from the family of single bipolar junction transistors (BJT). It is designed for use in low voltage applications like radio frequency (RF) amplifiers and signal switching circuits. Its collector can handle 3.3-67 V of collector-emitter voltage, with a maximum collector current of 10 mA and a maximum power dissipation of 0.05 W.This transistor contains a P-type base and N-type collector and emitter regions that form the three classic roles of the transistor, controlling the current flow between the collector and emitter. When a voltage is applied to the base, it forms a channel of charge carriers that connects the collector and emitter and allows current passage. As a result, when electrical signals enter the base, these signals are amplified by the resulting current which provides the transistor\'s main function and makes it a low voltage amplifier or signal switching circuit.When using the BSP62H6327XTSA1 in various applications, the temperature environment must be taken into consideration. This single bipolar transistor has a pulsed-power rating of up to 120 degrees Celsius, but the junction temperature must be lower than 150 degrees Celsius in order to prevent damaging the device. Furthermore, it is important to always keep the device away from volatile liquids, especially those containing organic materials that can cause damage to the device\'s safety characteristics.Another issue to consider when using the BSP62H6327XTSA1 is the rate at which the temperature of the device can change. If the temperature of the device rises too quickly, it can cause the device to become unstable, thus leading to unreliable operation. Therefore, the user should make sure that the device is kept away from other heat sources in order to ensure safe and reliable operation.The BSP62H6327XTSA1 is a useful device for low voltage applications. It is a small and low cost transistor that is well suited for applications such as RF amplifiers and signal switching circuits. Its temperature stability and safety characteristics make it suitable for various applications and environments. As a single bipolar transistor, it is a very capable device and is a great choice for low voltage applications.The specific data is subject to PDF, and the above content is for reference
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