BSP62H6327XTSA1 Allicdata Electronics
Allicdata Part #:

BSP62H6327XTSA1-ND

Manufacturer Part#:

BSP62H6327XTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PNP DARL 80V 1A SOT223
More Detail: Bipolar (BJT) Transistor PNP - Darlington 80V 1A 2...
DataSheet: BSP62H6327XTSA1 datasheetBSP62H6327XTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.5W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Base Part Number: BSP62
Description

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The BSP62H6327XTSA1 is a type of transistor from the family of single bipolar junction transistors (BJT). It is designed for use in low voltage applications like radio frequency (RF) amplifiers and signal switching circuits. Its collector can handle 3.3-67 V of collector-emitter voltage, with a maximum collector current of 10 mA and a maximum power dissipation of 0.05 W.This transistor contains a P-type base and N-type collector and emitter regions that form the three classic roles of the transistor, controlling the current flow between the collector and emitter. When a voltage is applied to the base, it forms a channel of charge carriers that connects the collector and emitter and allows current passage. As a result, when electrical signals enter the base, these signals are amplified by the resulting current which provides the transistor\'s main function and makes it a low voltage amplifier or signal switching circuit.When using the BSP62H6327XTSA1 in various applications, the temperature environment must be taken into consideration. This single bipolar transistor has a pulsed-power rating of up to 120 degrees Celsius, but the junction temperature must be lower than 150 degrees Celsius in order to prevent damaging the device. Furthermore, it is important to always keep the device away from volatile liquids, especially those containing organic materials that can cause damage to the device\'s safety characteristics.Another issue to consider when using the BSP62H6327XTSA1 is the rate at which the temperature of the device can change. If the temperature of the device rises too quickly, it can cause the device to become unstable, thus leading to unreliable operation. Therefore, the user should make sure that the device is kept away from other heat sources in order to ensure safe and reliable operation.The BSP62H6327XTSA1 is a useful device for low voltage applications. It is a small and low cost transistor that is well suited for applications such as RF amplifiers and signal switching circuits. Its temperature stability and safety characteristics make it suitable for various applications and environments. As a single bipolar transistor, it is a very capable device and is a great choice for low voltage applications.

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