BSP62,115 Allicdata Electronics
Allicdata Part #:

1727-5432-2-ND

Manufacturer Part#:

BSP62,115

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP DARL 80V 1A SOT223
More Detail: Bipolar (BJT) Transistor PNP - Darlington 80V 1A 2...
DataSheet: BSP62,115 datasheetBSP62,115 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.15440
2000 +: $ 0.14078
5000 +: $ 0.13170
10000 +: $ 0.12261
25000 +: $ 0.12110
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.25W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: BSP62
Description

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A BSP62,115 transistor is a type of bipolar junction transistor (BJT). It offers many features that make it a great choice for many applications. Its main features include high voltage and current, a wide range of operating temperatures, and low leakage currents. It also has a low base-emitter voltage and a high transconductance.

A BSP62,115 transistor can be used in applications such as audio amplifiers and amplifiers in power supplies. It is also ideal for low voltage and low power switching. These transistors are typically found in small signal circuits, as they offer low current and excellent power gain. Additionally, a BSP62,115 can be used for high frequency signal amplification and op-amp circuit design.

The working principle of the BSP62,115 transistor is based on standard bipolar transistor physics. It operates like a junction between a base, collector, and emitter. When a voltage is applied to the collector and the base is positive, current flows from the collector to the emitter. This produces a large current gain from the collector to the emitter, a factor referred to as hFE.

The BSP62,115 offers good performance due to its high gain-bandwidth and fast switching speed. It is also able to handle large currents, which makes it appropriate for power applications. These transistors can switch between their active and cut-off positions faster than other types of transistors, leading to higher efficiency and power delivery.

The BSP62,115 is a versatile transistor and can be used in a variety of applications. It can be used in linear circuitry or with low-level signals as well as in medium- and high-power applications. With its low power consumption, it is also suitable for applications that require prolonged operation. It is also relatively easy to implement into circuits, compared to other types of transistors.

Overall, the BSP62,115 offers many features that make it a great choice for many applications. It has high voltage and current ratings, low leakage, and is suitable for both linear and power applications. It is also easy to implement and operate, making it an attractive option for designers.

The specific data is subject to PDF, and the above content is for reference

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