BSP62E6327HTSA1 Allicdata Electronics

BSP62E6327HTSA1 Discrete Semiconductor Products

Allicdata Part #:

BSP62E6327HTSA1TR-ND

Manufacturer Part#:

BSP62E6327HTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS PNP DARL 80V 1A SOT-223
More Detail: Bipolar (BJT) Transistor PNP - Darlington 80V 1A 2...
DataSheet: BSP62E6327HTSA1 datasheetBSP62E6327HTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.5W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Base Part Number: BSP62
Description

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The BSP62E6327HTSA1 is a kind of bipolar junction transistor (BJT) generally used for amplification and switching purposes. It is part of an ever-expanding family of transistors that includes NPN and PNP devices, as well as high-power devices. The BSP62E6327HTSA1 is an N-channel device, which means that it needs an input current to turn it on and off. When the input current is present, the transistor is said to be saturated, and no further current can pass through the device.

The BSP62E6327HTSA1 is typically used in many applications. One common application involves controlling higher voltage and/or current than can be directly done with a microcontroller. Another common application is in driving relays and solenoids. In this case, the transistor acts as a low power electronic switch. The transistor is also used in amplifying signals where its gain can be adjusted to suit the required output. Furthermore, the BSP62E6327HTSA1 can also be used in high power analog circuits as well as high speed digital circuits.

The BSP62E6327HTSA1 operates using two bias voltages that vary its current gain. The base-emitter voltage (VBE) determines the current gain of the device and can be adjusted by the input current. The base-collector voltage (VBC) determines the switch on-off state of the device and is usually fixed at 4.0V DC. When the base-collector voltage is below 4.0V DC, the device is said to be switched off, and no current can pass through it. The output current can be varied by adjusting the base resistor.

The BSP62E6327HTSA1 can be considered a current controlled device, rather than a voltage controlled device, because it is limited by the current it can handle. As the current increases, the voltage across the collector and emitter decreases, making the transistor less conductive. The device should be operated at low frequencies and heat should be dissipated regularly with adequate heatsinks to prevent it from becoming damaged by excessive temperature. Overheating can also reduce the life of the device, so it is important to keep it within its specified temperature range.

To sum up, the BSP62E6327HTSA1 is a single bipolar junction transistor typically used for amplification and switching purposes. It is a current controlled device and is limited by the current it can handle. The base-emitter voltage determines the current gain of the device while the base-collector voltage determines the switch on-off state, which is usually fixed at 4.0V DC. The device should be operated at low frequencies and should be adequately cooled to prevent damage due to excessive temperature.

The specific data is subject to PDF, and the above content is for reference

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