BSP613PH6327XTSA1 Allicdata Electronics
Allicdata Part #:

BSP613PH6327XTSA1TR-ND

Manufacturer Part#:

BSP613PH6327XTSA1

Price: $ 0.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 60V 2.9A SOT-223
More Detail: P-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG...
DataSheet: BSP613PH6327XTSA1 datasheetBSP613PH6327XTSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 0.37000
10 +: $ 0.35890
100 +: $ 0.35150
1000 +: $ 0.34410
10000 +: $ 0.33300
Stock 1000Can Ship Immediately
$ 0.37
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

The BSP613PH6327XTSA1 is a single N-channel logic-level MOS field-effect transistor (MOSFET) designed for high-speed switching, power management and low-voltage applications. It combines an advanced E-MOSFET structure with a high-speed interconnection system to provide superior performance. This device offers superior performance in on-resistance, output capacitance and switching speed, making it a great choice for portable electronics, communications and power control.

Application Fields and Working Principle

The BSP613PH6327XTSA1 MOSFET has a wide range of applications in the areas of portable electronics, communications and power control. The device can be used in digital circuits for power management, switching, noise reduction and voltage regulator applications. It can also be used in low-noise analog circuits, as well as for high-power audio amplification. The device has an efficient, low-voltage input-output switch, making it a great choice for low-voltage applications.

The working principle of the BSP613PH6327XTSA1 MOSFET is based on the field-effect principle. A voltage applied to the MOSFET’s gate terminal controls the flow of current through the channel between the source and drain. The channel is created when the voltage on the gate counteracts the voltage applied between the source and drain, resulting in a channel with a finite resistance. This enables the device to perform high-speed, low-voltage switch operations with high on-resistance, low output capacitance and fast switching speed.

The BSP613PH6327XTSA1 MOSFET also has a low threshold voltage and a low gate leakage current, allowing for efficient operation when switching low-voltage signals. The device is equipped with an active die-level protection circuit, which prevents over-current damage to the circuit by limiting it to a safe level when a current overload occurs. This feature makes the device suitable for operations in noisy environments.

Key Features

The BSP613PH6327XTSA1 MOSFET has a number of key features, including:

  • High-speed switching capability, with a fast turn-on and turn-off time.
  • Low-voltage input-output switching, making it suitable for low-voltage applications.
  • Low-on-resistance and low-output capacitance, allowing for efficient operation.
  • Active die-level protection circuit, preventing damage from over-current.
  • Low threshold voltage and gate leakage current, allowing for reliable operation in noisy environments.

Conclusion

The BSP613PH6327XTSA1 MOSFET offers an excellent combination of performance, quality and value. With its high-speed switching capabilities, low-voltage input-output switching, low-on-resistance, low-output capacitance and active die-level protection, it is an ideal choice for portable electronics, power control and low-noise analog circuits. The device may also be used in digital circuits for power management, switching, noise reduction and voltage regulator applications.

The specific data is subject to PDF, and the above content is for reference

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