
Allicdata Part #: | BSP615S2L-ND |
Manufacturer Part#: |
BSP615S2L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 2.8A SOT-223 |
More Detail: | N-Channel 55V 2.8A (Ta) 1.8W (Ta) Surface Mount PG... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 12µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSP615S2L is a small signal N-channel enhancement mode MOSFET, which is suitable for use in low/medium power switching applications, as well as in low power linear operations. It is capable of providing good performance due to its low RDSon when used for switching and low input/output capacitance values when used for linear operations.
The BSP615S2L is built using high voltage capable silicon gate oxide MOSFET process technology, housed in a small 4-pin SOT-23 package. This makes it ideal for applications where space is limited. Furthermore, it features an extremely low gate charge, making it suitable for use in high frequency applications.
In terms of application fields, BSP615S2L can be used in a variety of applications such as load switch, DC-DC converter, switching regulator, DC motor drives, as well as in various types of power management circuits.
In terms of working principle, BSP615S2L is an enhancement type MOSFET, which means no gate voltage is required for conduction. When a voltage is applied to the gate, it creates an inversion layer between gate and source which allows electrons to flow from source to drain. The amount of current that is able to flow through the channel is controlled via the voltage applied to the gate. This, in turn, results in voltage transmission from source to drain.
For linear operations, BSP615S2L requires a small amount of gate voltage to initiate conduction. Once the device is turned on, the gate voltage is no longer required and the drain current remains constant. This is due to the small difference between the threshold voltage and maximum drain current.
For switching applications, BSP615S2L is compatible with most logic gate circuits, making it easy to control. With the right gate voltage, the gate can be turned on/off quickly, which is ideal for switching applications. Furthermore, it features a low RDSon, which helps to ensure an efficient conduction path while switching.
In summary, the BSP615S2L is a small signal N-channel enhancement mode MOSFET that is suitable for use in low/medium power switching applications and low power linear operations. Its low RDSon makes it excellent for use in efficient power management circuits. Additionally, the low gate charge makes it suitable for use in high frequency applications. Furthermore, its small package makes it ideal for applications where space is limited.
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