BSP612PH6327XTSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BSP612PH6327XTSA1 is a single high-voltage N-channel enhancement mode MOSFET semiconductor device that is produced by Infineon Technologies Corporation. The device is designed to be used in applications where it will be exposed to high voltages and may be used in various circuits such as 12 V DC-DC converters, high power supplies and other power switching applications.

The BSP612PH6327XTSA1 is designed with a maximum drain‑source break down voltage of 600 V and it has a low level on-resistance of slightly more than 27.8 mOhms. It is a powerful current carrying device that can easily handle up to 5 A of continuous drain source current with a maximum pulse width of 3.6 ms.

The BSP612PH6327XTSA1 is an ideal choice for applications that require high voltage and high current levels. The device is a standard n-channel enhancement mode MOSFET that has a symmetrical flow of current and voltage, meaning it has a uniform resistance to both the drain current and drain voltage. It also has low gate threshold voltage and high input impedance and can be easily controlled with low power.

The working principle of the BSP612PH6327XTSA1 is based on the basic principles of MOSFETs. When a voltage is applied to the gate, it allows electrons to pass through and onto the drain. This creates an electric field that repels the electrons, allowing them to flow freely between the drain and source. By controlling the voltage on the gate, it is possible to adjust the current that passes through the device.

The BSP612PH6327XTSA1 can be used in a wide range of applications such as switching modes, variable frequency converters, and variable power supplies. In addition, it can be used in high power audio amplifiers, high current DC-DC converters, as well as high current lighting systems. As an enhancement-mode MOSFET, it is ideal for applications where efficiency and low power consumption are important.

In summary, the BSP612PH6327XTSA1 is a single high-voltage N-channel enhancement mode MOSFET that is designed for high current, high voltage enclosed applications. Its low resistance and high input impedance makes it ideal for use in high voltage switching applications. The device can be easily controlled by applying a voltage to the gate and can handle up to 5 A of continuous drain source current with a maximum pulse width of 3.6 ms.

The specific data is subject to PDF, and the above content is for reference