BSP613P

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BSP613P is a silicon N-channel enhancement-mode power field-effect transistor (MOSFET) specifically designed for high frequency power conversion applications.

This device is comprised of a number of integrated components in order to manage the heat dissipation, reduce the gate input capacitance, and enhance the switching speed. In addition, the device also features a wide variety of electrical and thermal protection features, such as over-current and over-temperature protection, to prevent possible destruction of the device or system.

The maximum drain-source voltage of the device is 30V, with an RDS (on) value of 6mΩ. This device offers low conduction losses, thanks to its low input capacitance and good thermal characteristics. This makes it ideal for applications in power conversion, such as DC-DC converters, DC-AC inverters, and UPS systems.

The BSP613P has a low threshold voltage, allowing it to operate in PWM modes from 5V gate drive. Its low threshold also keeps gate charges down, enabling specific turn-on and turn-off delays to be obtained. These devices also feature fast switching characteristics, meaning that they are suitable for any high switching frequency applications.

The device also has low gate charge, providing low input capacitance, meaning that MOSFETs can be placed close to each other and still remain effective. This is beneficial in power conversion applications, as it enables noise isolation, allowing the device to operate with greater efficiency and reliability.

The BSP613P is also capable of withstanding high temperature operating conditions (Tj max = 175° C). This makes it suitable for a wide variety of automotive and industrial applications, where good thermal performance is paramount.

In summary, the BSP613P is an ideal device for a variety of power conversion applications, due to its low RDS (on) value and low input capacitance. It has a wide variety of features, enabling it to be used in high frequency, low cost applications. Its low threshold voltage and low gate charge also make it suitable for noise isolation and high switching frequencies. Finally, the device is capable of withstanding high temperature operating conditions, making it a reliable and efficient solution for many applications.

The specific data is subject to PDF, and the above content is for reference