Allicdata Part #: | BUZ73IN-ND |
Manufacturer Part#: |
BUZ73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 7A TO-220AB |
More Detail: | N-Channel 200V 7A (Tc) 40W (Tc) Through Hole PG-TO... |
DataSheet: | BUZ73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 530pF @ 25V |
Vgs (Max): | ±20V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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BUZ73 is a dual N-channel enhancement mode MOSFET, designed for use in stepper motor drivers and high-speed switching applications. It is a power MOSFET fabricated using advanced CMOS technology. The BUZ73 has a wide range of features that make it a good choice for power management applications, including on chip thermal sensing, multiple voltage levels, overvoltage protection, and undervoltage lockout.
The BUZ73 is designed for use in a variety of high-speed switching applications, including solenoid, stepper motor, and actuator drivers, brushless motor controllers, and power switches. It has an exceptionally low resistance of 5 mOhm, which makes it ideal for these high speed applications, where high current is required. The maximum current that the BUZ73 is capable of handling is 4A. Furthermore, the BUZ73 is designed to minimize power dissipation by switching at the peak of the source to drain voltage.
The working principle of the BUZ73 is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) structure. MOSFETs are unipolar transistors and work by controlling the channel of electrons between the drain and source terminals. The BUZ73 has a gate terminal which can be controlled with a voltage signal. When the gate voltage is below the threshold voltage, the MOSFET is off, blocking current flow. When the gate voltage is equal to or above the threshold voltage, the MOSFET starts to conduct, allowing current flow.
The BUZ73 is able to operate at higher drain to source voltages, up to 40 volts, which makes it suitable for mobile applications. It also has an on chip thermal sensing feature to ensure that the MOSFET does not heat up during operation. Furthermore, the BUZ73 has multiple protection features, including overvoltage protection and undervoltage lockout, which further enhance its reliability.
In conclusion, the BUZ73 is a suitable choice for high speed switching applications, due to its low resistance, high power handling capacity, and several protection features. The BUZ73 has proved to be a reliable and efficient device for power management applications in the automotive, industrial, and mobile sectors.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BUZ73E3046XK | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 7A TO-22... |
BUZ73A | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 5.5A TO-... |
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BUZ73AL | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 5.5A TO-... |
BUZ73L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 7A TO-22... |
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