BUZ73E3046XK

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The BUZ73E3046XK is a n-channel enhancement mode field effect transistor (FET) from Semiconductor Components Industries, LLC. It belongs to a family of devices known as MOSFETs, which are transistors capable of both analog and digital circuits. The BUZ73E3046XK has a drain-source voltage of 40 V, a drain-source current of 250 mA and a continuous drain current of 0.3 A. It is widely used in applications where low-power operation is desired, such as those in electronic equipment and control circuits.

Field Effect transistors, like the BUZ73E3046XK, are electronic components capable of controlling current through a single external voltage applied to its gate. They are used in a wide range of applications such as power switching, amplifier gain control, power management and analog circuits. By utilizing this property, the BUZ73E3046XK can be used in high voltage and high current applications and is suitable for several applications such as motor controls, audio, RF and industrial applications.

One of the main advantages of the BUZ73E3046XK is its ability to provide high-speed switching. This feature allows it to be applied in high-frequency circuits, such as pulse-width modulation (PWM) control, high-speed switching and frequency conversion. The device also has a low ON-state resistance and a low capacitance, making it suitable for power conversion and control, switching applications and audio signal amplification.

The device is also suitable for various analog applications including power management, signal conditioning, and amplification. The high-speed transition of the BUZ73E3046XK allows it to be used as an amplifier for signal conditioning, as well as for power management in low-voltage audio signal amplifiers and in switching power supplies. The device is also used in signal conditioning applications, such as filters and voltage regulators.

The BUZ73E3046XK is a single n-channel field effect transistor, which means it has a single transistor body that is composed of three concentric tubes (source, gate and drain). The source and drain of the BUZ73E3046XK are connected directly to the P and N-type regions on the silicon wafer. The gate contact is connected to the body of the device and is used to control the current flow between the source and drain.

The BUZ73E3046XK operates on the principle of the Channel Enhancement Effect. In this effect, the current that flows between the source and the drain is controlled by a voltage applied to the gate. The channel of current is created when electrons flow from the source to the drain as a result of an electric field created by the gate voltage. When the gate voltage is low, the electric field is weak, and the current is minimal; when the gate voltage is increased, the electric field increases, and the current increases.

In summary, the BUZ73E3046XK is a n-channel enhancement mode field effect transistor from Semiconductor Components Industries, LLC. It has a wide range of applications, including motor controls, RF, audio, power management and signal conditioning circuits. It is characterized by high-speed switching and low ON-state resistance, making it suitable for power conversion, PWM control and frequency conversion applications. The device operates on the principle of the Channel Enhancement Effect, where the current that flows between the source and drain is controlled by a voltage applied to the gate.

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