BUZ73A

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The BUZ73A is a N-channel enhancement-mode vertical DMOS switch (insulated-gate field-effect transistor), designed for power transmission and load switching applications. With its vertical construction, this MOSFET (metal-oxide-semiconductor field-effect transistor) offers lower on-resistance than a traditional planar MOSFET, and its low gate charge Qg maximizes efficiency. It also provides lower on-resistance over temperature and higher breakdown voltage ratings, meaning it is suitable for load switching and high power applications that require high current conduction.

The BUZ73A is designed to switch high-power signals with low-voltage signals. It can be used to switch between different types of loads, or to switch between different power sources. The device consists of two terminals, the drain (D) and source (S). The gate voltage applied to the gate (G) terminal controls the switch operation, and is typically controlled by an external controlling circuit.

When the gate voltage is low, the switch is in a non-conductive, or off, state. In this state, the drain and source terminals are not connected and no current flows between them. When the gate voltage is high, the device turns on and a low-resistance path is formed between the drain and source. This lower resistance allows current to flow through the device and the load connected to it. The current flowing through the drain and source terminals is proportional to the gate voltage applied to the gate.

The BUZ73A is best used with a PWM (pulse-width modulation) signal for digital switching of power. The device also has a fast switch turn-on and turn-off time, which allows for high-fidelity power control. It is suitable for switching applications where the device needs to be turned on and off quickly, such as in motor control.

The BUZ73A has been designed to be inside ballast circuits, AC/DC converters, DC/DC converters, power supplies, lighting control, motor control, battery chargers, and other high-power, high-current load switch applications. The device is also suitable for automotive applications due to its low on-resistance over temperature range. Furthermore, it provides low noise and EMI (electromagnetic interference) reduction, making it suitable for applications where noise and EMI are a concern.

In summary, the BUZ73A is a power MOSFET with a vertical construction, low on-resistance, fast switching times, and low gate charge Qg. Its low on-resistance makes it suitable for high-power applications that require high current handling, and its fast switching times allow for digital switching of power. The device is suitable for automotive, power supply, and motor control applications, and its low noise and EMI characteristics make it suitable for applications where noise and EMI are a concern.

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