BUZ73ALHXKSA1 Allicdata Electronics
Allicdata Part #:

BUZ73ALHXKSA1-ND

Manufacturer Part#:

BUZ73ALHXKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 5.5A TO220-3
More Detail: N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-...
DataSheet: BUZ73ALHXKSA1 datasheetBUZ73ALHXKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
Vgs (Max): ±20V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Introduction to the BUZ73ALHXKSA1

The BUZ73ALHXKSA1 is a type of insulated-gate field effect transistor, otherwise known as an I-FET or MOSFET. This particular type of transistor is commonly used in projects requiring a wide range of input and/or output voltages, including voltage amplifiers and microcontrollers.

Application Fields and Working Principle

The BUZ73ALHXKSA1 is particularly suited for applications in which a wide input range is necessary. This is because the BUZ73ALHXKSA1 features a very low on-resistance of 4.3 Ohms, allowing it to support a wider input range than other types of FETs.The BUZ73ALHXKSA1 works as an insulated-gate field effect transistor by controlling the transfer of electric current or voltage in one or two directions. This is accomplished using the gate-source voltage (VGS) to externally manipulate the operation of the device. This makes the BUZ73ALHXKSA1 an ideal choice for a wide range of applications, such as signal processing, motor control, and the control of LED lighting.The BUZ73ALHXKSA1 also has a good temperature coefficient and low gate threshold voltage, making it ideal for analog applications such as amplifiers, attenuators, and oscillators. In addition, the BUZ73ALHXKSA1 has a fast switching time, making it suitable for digital applications such as logic gates and switching voltage regulators.

Conclusion

The BUZ73ALHXKSA1 is a popular type of insulated-gate field effect transistor because of its low on-resistance and wide input range. Its wide range of applications makes it a great choice for projects requiring a low power source, such as signal processing, motor control, and LED lighting. In addition, its fast switching time and good temperature coefficient make it an ideal choice for digital and analog applications.

The specific data is subject to PDF, and the above content is for reference

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