Allicdata Part #: | BUZ73ALHXKSA1-ND |
Manufacturer Part#: |
BUZ73ALHXKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 5.5A TO220-3 |
More Detail: | N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-... |
DataSheet: | BUZ73ALHXKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 840pF @ 25V |
Vgs (Max): | ±20V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3.5A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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Introduction to the BUZ73ALHXKSA1
The BUZ73ALHXKSA1 is a type of insulated-gate field effect transistor, otherwise known as an I-FET or MOSFET. This particular type of transistor is commonly used in projects requiring a wide range of input and/or output voltages, including voltage amplifiers and microcontrollers.Application Fields and Working Principle
The BUZ73ALHXKSA1 is particularly suited for applications in which a wide input range is necessary. This is because the BUZ73ALHXKSA1 features a very low on-resistance of 4.3 Ohms, allowing it to support a wider input range than other types of FETs.The BUZ73ALHXKSA1 works as an insulated-gate field effect transistor by controlling the transfer of electric current or voltage in one or two directions. This is accomplished using the gate-source voltage (VGS) to externally manipulate the operation of the device. This makes the BUZ73ALHXKSA1 an ideal choice for a wide range of applications, such as signal processing, motor control, and the control of LED lighting.The BUZ73ALHXKSA1 also has a good temperature coefficient and low gate threshold voltage, making it ideal for analog applications such as amplifiers, attenuators, and oscillators. In addition, the BUZ73ALHXKSA1 has a fast switching time, making it suitable for digital applications such as logic gates and switching voltage regulators.Conclusion
The BUZ73ALHXKSA1 is a popular type of insulated-gate field effect transistor because of its low on-resistance and wide input range. Its wide range of applications makes it a great choice for projects requiring a low power source, such as signal processing, motor control, and LED lighting. In addition, its fast switching time and good temperature coefficient make it an ideal choice for digital and analog applications.The specific data is subject to PDF, and the above content is for reference
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