BUZ73A H Allicdata Electronics
Allicdata Part #:

BUZ73AH-ND

Manufacturer Part#:

BUZ73A H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 5.5A TO220-3
More Detail: N-Channel 200V 5.5A (Tc) 40W (Tc) Through Hole PG-...
DataSheet: BUZ73A H datasheetBUZ73A H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
Vgs (Max): ±20V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The BUZ73A H is a Gate Turn-Off Thyristor (GTO), which is a type of power semiconductor device that renders high voltage and high current control. This device is capable of handling high power switching due to its robust construction and advanced technology. The BUZ73A H offers numerous advantages including robust construction, superior performance, and low power use. This is why it is a popular choice in a range of application fields.

The BUZ73A H is a three-terminal device, with each terminal designated as Gate, Anode and Cathode respectively. The Gate controls the current flow by turning on or off the power between the Anode and the Cathode. When the Gate is turned on, it provides the necessary voltage to open the power switch between the Anode and the Cathode, thus allowing the current to flow. Similarly, when the Gate is turned off, the power switch between the Anode and the Cathode is open, thereby stopping the current flow.

The BUZ73A H works on the principle of Gate Turn-Off. This turns off the power switch from the Anode to the Cathode when the Gate is turned on. When the Gate is turned off, the isolation between the Anode and the Cathode is enabled. The BUZ73A H can be operated in two directions, either active or inductive. In active mode, the switch is activated when the Gate voltage is greater than a certain threshold. In the inductive mode, the switch is turned off when the Gate voltage is greater than a certain threshold. This makes it possible to control the current flow in line with the desired power levels.

The integrated construction of the BUZ73A H makes it a good choice for applications that require high current control and high voltage switching. It is suitable for use in AC switching applications and high power circuits. It has a high voltage withstand capability and low power dissipation. The high voltage withstand capability and low power dissipation enable the BUZ73A H to be used in a range of applications in various industries.

The BUZ73A H is a popular choice for industrial applications that require high voltage switching and high current control. It has been used in high power circuits, AC switching applications, renewable energy systems, mining applications, and automotive systems. It can be used to control the power levels in computer systems, telecommunication systems, and home electrical systems. It has also been used in applications such as motors and drives, electric power transmission and distribution systems, and electric railway equipment.

The BUZ73A H is a reliable and efficient device for high voltage and high current control. It is capable of reliably handling high power switching due to its robust design and advanced technology. It is also cost effective, easy to use, and can be easily installed in various industrial applications. It is a great choice for power semiconductor devices and industrial applications that require high voltage and high current control. It is a highly efficient, reliable and cost effective device for controlling power levels in various industrial applications.

The specific data is subject to PDF, and the above content is for reference

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