Allicdata Part #: | BUZ73LHXKSA1-ND |
Manufacturer Part#: |
BUZ73LHXKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 7A TO220-3 |
More Detail: | N-Channel 200V 7A (Tc) 40W (Tc) Through Hole PG-TO... |
DataSheet: | BUZ73LHXKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 840pF @ 25V |
Vgs (Max): | ±20V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 3.5A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The BUZ73LHXKSA1 is a high-performance N-channel power metal-oxide semiconductor field-effect transistor (MOSFET) that was designed for high voltage applications such as DC-DC converters, power converters, and general-purpose power management in automotive and industrial applications. The BUZ73LHXKSA1 is a high-temperature environment operating N-channel MOSFET with a drain-source breakdown voltage of 500 volts, current capability of 0.004 amps, and reverse gate-source voltage of -20 volts.
The chip can operate in temperatures ranging from -55 to +150 degrees Celsius, making it suitable for applications in extreme temperatures and environments. In addition, the BUZ73LHXKSA1 has an avalanche energy rating of 6.7 milli-amps, allowing it to be used in harsh conditions such as motor drive applications where high currents and voltages may be present. This chip also has a standard package size of Power Point (PT) 4, making it easy to install in existing circuit boards.
The BUZ73LHXKSA1 is a voltage-controlled device and utilizes a three-terminal gate design to provide adjustable and efficient control of current and power when used in a multitude of applications, such as high-speed switching, protection systems, power modules, and power converters. The gate terminal is used to control the current flow in the transistor by manipulating the electric field created between the gate and the other two terminals (the source and drain) in the transistor. By adjusting the voltage on the gate terminal, the current flowing through the drain and source terminals can be regulated. This is the basis for producing various output signals such as ON/OFF signals and pulse-width modulation signals.
In addition, the BUZ73LHXKSA1 has a built-in avalanche diode, which protects the transistor from high-energy spike currents. This avalanche diode helps to reduce power losses while increasing the overall performance. The BUZ73LHXKSA1 also features a low gate charge, making it suitable for high frequency (RF) applications.
Overall, the BUZ73LHXKSA1 is a high performance and reliable power transistor offering high voltage, low gate charge, and excellent avalanche characteristics for a variety of applications in industrial, automotive and other industries. Its built-in avalanche protection, adjustable current and voltage control, and built-in avalanche diode make it an ideal choice for applications requiring high reliability, consistent current and voltage regulation, and efficient power conversion.
The specific data is subject to PDF, and the above content is for reference
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