Allicdata Part #: | CEDM7002AETR-ND |
Manufacturer Part#: |
CEDM7002AE TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET NCH 60V 0.3A SOT883 |
More Detail: | N-Channel 60V 300mA (Ta) 100mW (Ta) Surface Mount ... |
DataSheet: | CEDM7002AE TR Datasheet/PDF |
Quantity: | 144000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | SOT-883L |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | 20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CEDM7002AE TR is a type of Insulated Gate Bipolar Transistor (IGBT), also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a high-voltage, low-power-dissipation device designed for easy integration into complex power management systems. The CEDM7002AE TR is widely used in automotive, industrial, and consumer applications, as well as in high-efficiency power supplies and motor control.
Application FieldsThe CEDM7002AE TR is widely used in motor control and power applications, as well as in automotive, industrial, and consumer applications. Commonly used in high-efficiency power supplies and motor control system, such as HVAC, agriculture, off-road trucks, automated factories, consumer electronics, industrial audio, lighting systems, fans, and pumps. It is suitable for applications requiring very low noise, low power consumption, and high efficiency.
Work PrincipleThe CEDM7002AE TR is an IGBT based on metal-oxide semiconductor (MOSFET) technology. It has an insulated gate electrode that controls the current flow between the source and the drain terminals. The gate is insulated, which prevents current leakage, and the voltage at the gate terminal is regulated to ensure that the transistor operates in a linear manner. This type of transistor is characterized by a fast turn-on and turn-off time, as well as by a low forward gate-source voltage drop.
When the gate voltage is applied, the MOSFET is turned on and the current between the drain and the source is conducted. As the transistor is driven by the gate voltage, the voltage between the source and the drain is directly proportional to the gate voltage. This voltage is commonly referred to as the A-FET voltage. When the gate voltage reaches the MOSFET’s rated value, the transistor is turned off, disconnecting the load from the source.
ConclusionThe CEDM7002AE TR is a high-voltage, low-power-dissipation IGBT device designed for easy integration into power management systems. It is widely used in automotive, industrial, and consumer applications, as well as in high-efficiency power supplies and motor control. The device is characterized by a fast turn-on and turn-off time, as well as by a low forward gate-source voltage drop.
The specific data is subject to PDF, and the above content is for reference
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