Allicdata Part #: | CEDM7004TR-ND |
Manufacturer Part#: |
CEDM7004 TR |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET N-CH 8.0V 3.56A SOT-883 |
More Detail: | N-Channel 30V 1.78A (Ta) 100mW (Ta) Surface Mount ... |
DataSheet: | CEDM7004 TR Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.15063 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | SOT-883 |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 43pF @ 25V |
Vgs (Max): | 8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.79nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 460 mOhm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.78A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction to CEDM7004 TR Application Fields and Working Principle
The CEDM7004 TR is a silicon nitride thin-film transistors (TFET) widely used in many applications. It has superior performance compared to traditional MOSFET transistors, and its gate control is more efficient and reliable.
This type of transistor is especially useful in applications such as high-speed logic circuits, analog switch circuits, and power management systems. Furthermore, the CEDM7004 TR also has other characteristics that make it well-suited for many semiconductor processes and systems.
Design and Structure of CEDM7004 TR
The CEDM7004 TR is a TFET that is composed of a thin-film silicon nitride (SiN) gate structure. The gate is composed of both an anode and cathode. The anode and cathode are connected by a pair of source and drain regions. Typically, the gate length is kept small enough to prevent any significant leakage current through the gate-drain area. The cross-section of the device is then densely filled with SiN insulating material and aluminum nitride (AlN) dielectric material. This combination effectively blocks the flow of electrons and increases gate control efficiency.
The gate voltage is applied to the device by a single contact placed at the center of the gate-drain region. This contact point is then connected either to the source or drain region, depending upon the particular application. This contact point is called the source-gate contact, which acts as the control of the device and allows for the efficient channeling of electric current.
The CEDM7004 TR also comes with an in-built programmable voltage regulator (VRIO) that can be used to customize its operating characteristics and power consumption. The VRIO can be programmed using both digital and analog inputs, allowing the device to be used in a wide range of applications.
Working Principle of CEDM7004 TR
The working principle of the CEDM7004 TR is quite simple. When a voltage is applied to the source-gate contact, it causes a voltage drop across the channel and creates an electric field that controls the movement of current. As a result, the electric current flowing through the channel is controlled by the voltage applied to the source-gate contact.
The control of current through the device is then dependent on how much voltage is applied to the source-gate contact. The greater the voltage, the larger the current flow through the channel. This means that higher voltage levels can result in higher current flows and thus, more power for applications.
Furthermore, the CEDM7004 TR also has a unique feature in that it can be configured to provide an adjustable current threshold level. This feature allows the device to remain consistent even when temperatures fluctuate and ensures a reliable performance no matter the environment.
Applications of CEDM7004 TR
The CEDM7004 TR is primarily used in high-speed logic circuits such as digital logic circuitry, as well as in analog switching applications. It is also ideal for use in power management systems as it is able to operate at lower voltage levels while still providing high power performance. Additionally, the device is often utilized in RF and microwave systems as it has a low-power consumption level.
The CEDM7004 TR is also often used for memory and drive circuits, as well as for common logic functions. Furthermore, the device is becoming increasingly popular in automotive, industrial, and consumer electronic applications. This is primarily due to the device’s low-power consumption and highest current density among the TFETs.
Conclusion
In conclusion, the CEDM7004 TR is a silicon nitride thin-film transistor that is widely used in many applications. It is capable of providing superior performance compared to traditional MOSFET transistors. Its gate control is more efficient and reliable, making it ideal for applications such as high-speed logic circuits, analog switch circuits, and power management systems. Additionally, the CEDM7004 TR is ideal for RF and microwave systems due to its low-power consumption level. Thus, the CEDM7004 TR can be used in a wide range of applications, making it an invaluable tool for many different industries.
The specific data is subject to PDF, and the above content is for reference
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