Allicdata Part #: | CEDM8001VLTR-ND |
Manufacturer Part#: |
CEDM8001VL TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET P-CH 20V 0.1A SOT883 |
More Detail: | P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount ... |
DataSheet: | CEDM8001VL TR Datasheet/PDF |
Quantity: | 8000 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | SOT-883VL |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 3V |
Vgs (Max): | 10V |
Gate Charge (Qg) (Max) @ Vgs: | 0.66nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 10mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CEDM8001VL TR is a discrete component generally included in the transistors and field effect transistors (FETs) category, specifically in the single MOSFET type.
A MOSFET is an acronym for Metal-Oxide-Semiconductor Field Effect Transistor. It is a type of transistor which (unlike their BJT cousins) use an oxide-insulated gate electrode to control the current along with the voltage applied to the gate. This means that with the right voltage, current can be controlled, making it an important component in digital logic circuits. It is also capable of producing high switching speeds, and low risk of thermal breakdown.
The CEDM8001VL TR is especially suitable for applications requiring direct current (DC) motor drive, actuators and HID lamp control. With its integrated design, it is a reliable choice for use in electronic appliance and industrial equipment for motor control. It has a maximum operating temperature of 85ᵒC, and is rated for operation with a current up to a maximum of 4.5A. With its low on-state resistance of 3.2mohm, it allows for a high switching speed, even at its rated current.
Working PrincipleThe CEDM8001VL TR has an integrated design which includes two main terminals - the gate and the source. The gate is required to connect to the desired voltage, and the source terminal is connected to the drain voltage. When the desired voltage is applied across the gate and the source terminals, it causes a current to flow between the drain and the source, in accordance with the semantics of MOSFETs. When the gate voltage is at zero, the transistor will be in the off state (high resistance) and no current will flow.<
The specific data is subject to PDF, and the above content is for reference
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