Allicdata Part #: | CEDM8004BK-ND |
Manufacturer Part#: |
CEDM8004 BK |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | MOSFET P-CH 30V 0.45A SOT883 |
More Detail: | P-Channel 30V 450mA (Ta) 100mW (Ta) Surface Mount ... |
DataSheet: | CEDM8004 BK Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.15063 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | SOT-883 |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 55pF @ 25V |
Vgs (Max): | 8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.88nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 430mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 450mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Bulk |
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CEDM8004 BK is a type of single transistor, which also falls under the categories of both field-effect transistors (FET\'s) and metal-oxide semiconductor field-effect transistors (MOSFET\'s). It is a popular choice of transistor for many applications due to its various features, such as its low power draw and relatively simple design. The CEDM8004 BK transistor is composed of three main parts: the source, the gate, and the drain.
This transistor is commonly used in many circuitry designs. It is often used as an amplifier, usually in the form of a voltage amplifier. It is also used to control current flow in an electrical system, often in the form of a power switch. In addition, it can be used as a voltage regulator, as well as a clock driver, among other things.
The working principle of the CEDM8004 BK is simple, yet powerful. It relies on the fact that a voltage applied to the gate will, in turn, cause a current to flow between the source and the drain. This is due to the fact that the source-gate voltage, known as VGS, is directly proportional to the amount of current that can flow between the source and drain. When the applied gate voltage is in a particular range, the transistor will allow current to flow easily; conversely, when the VGS is outside of the particular range, the transistor will remain in an “off” state and no current will flow at all. The particular range of VGS at which the transistor will allow current to flow is known as the threshold voltage of the transistor.
Apart from its primary function of amplifying and controlling current, the CEDM8004 BK also has high-level breakdown voltage and maximum power dissipation. The high-level breakdown voltage is the maximum voltage applied across the two terminals of the transistor before it starts to break down, and usually has to be less than or equal to the rated voltage for the transistor. The maximum power dissipation of the transistor is the maximum power it can dissipate before it begins to breakdown, and this is also less than or equal to the rated power for the transistor. This high-level breakdown voltage and maximum power dissipation are important features that make the CEDM8004 BK a popular choice for many applications.
Overall, the CEDM8004 BK is a versatile and useful transistor that can be used in a variety of applications. From amplifiers to switch circuits, the CEDM8004 BK is capable of providing reliable and efficient performance. Furthermore, its high-level breakdown voltage and maximum power dissipation make it especially suited to certain types of circuits, such as power supply circuits, where voltage and power need to be accurately regulated. This makes the CEDM8004 BK a popular choice of transistor for many applications.
The specific data is subject to PDF, and the above content is for reference
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