| Allicdata Part #: | CEDM8001BK-ND |
| Manufacturer Part#: |
CEDM8001 BK |
| Price: | $ 0.15 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Central Semiconductor Corp |
| Short Description: | MOSFET P-CH 20V 0.1A SOT-883 |
| More Detail: | P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount ... |
| DataSheet: |  CEDM8001 BK Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.13132 |
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | SOT-883 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 100mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 3V |
| Vgs (Max): | 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.66nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8 Ohm @ 10mA, 4V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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The CEDM8001 BK is a MOSFET transistor. It is a single transistor device designed for high power audio, video applications and in general power switching and driving applications. MOSFETs are typically used to switch electrical power between two points, replacing BJTs and other transistors in many applications.
In terms of structure and operation, MOSFETs consist of three terminals; the gate (G), the source (S) and the drain (D). The gate of the transistors is the input and it is used to control the flow of current. The source and drain are the power terminals from which the current flows. The current flow is regulated by applying a voltage to the gate. When the voltage applied to the gate is lower than the one applied to the source, no current flows.
The CEDM8001 BK MOSFET is particularly useful in audio, video and other power switching and driving applications due to its relatively high breakdown voltage (VDs= 800V). It is a suitable choice when an exceptionally high amount of current needs to be switched. This is possible because the CEDM8001 BK is designed with a common source configuration and a specialized power-level MOSFET process technology. Additionally, it offers a maximum drain current (ID) at 275A. The device also exhibits a fast turn-off and turn-on time (tF= 39ns, tR= 28ns), suitable for high frequency applications. It is available in an ROHS compliant TO-220 package.
In order to get the best out of the CEDM8001 BK MOSFET, it is best to use a voltage drive circuit to control the gate voltage. A driver IC is a suitable choice for this purpose. When using the device in a switching circuit, the load should always be connected between the source and drain terminals. All in all, the CEDM8001 BK MOSFET is an excellent choice for those who need a robust and reliable single transistor device for high power audio, video, or general power switching and driving applications.
The specific data is subject to PDF, and the above content is for reference
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