CPH3109-TL-E Allicdata Electronics
Allicdata Part #:

CPH3109-TL-EOSTR-ND

Manufacturer Part#:

CPH3109-TL-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 3A CPH3
More Detail: Bipolar (BJT) Transistor PNP 30V 3A 380MHz 900mW S...
DataSheet: CPH3109-TL-E datasheetCPH3109-TL-E Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 230mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 380MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Supplier Device Package: 3-CPH
Description

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CPH3109-TL-E is a single bipolar junction transistor (BJT) complemented with an integrated current gain of respectively, 120 and 60. It has a maximum voltage standing of 30 volts, with a maximum current rating of 1.2A and a maximum power dissipation of 16W. This product is mainly used for switching and amplification applications in various fields.

The main application fields of CPH3109-TL-E transistors include radio frequency signal switching, audio signal amplification, video signal amplification, and high current applications. It is suited for use in both low and high power applications. It is particularly suitable for medium power applications. It can also be used as a power amplifier or as a signal booster.

The working principle of a BJT is based on the movement of charge carriers – electrons and holes – across a p-n junction. When an external voltage is applied across the base-collector junction, electrons move from the base to the collector, while holes move in the opposite direction. This creates a current in the transistor, allowing it to amplify or switch currents. When current flows through the collector-emitter junction, the voltage drops across this junction, causing a larger current to flow through the transistor. This current is then amplified, providing an output signal.

The CPH3109-TL-E transistor is designed for operation at higher frequency applications, such as radio frequency signal switch, audion signal amplification and video signal amplification. It is also used in high current applications due to its high current ratio and high power dissipation. Because of its low power capabilities and small size, it is often used in low power and portable devices.

In summary, CPH3109-TL-E transistors can be used for switching and amplification in various applications where low power, high frequency and high current are required. Its features make it ideal for use in various types of applications, making it one of the most versatile devices available on the market.

The specific data is subject to PDF, and the above content is for reference

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