
Allicdata Part #: | CPH3448-TL-WOSTR-ND |
Manufacturer Part#: |
CPH3448-TL-W |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 4A CPH3 |
More Detail: | N-Channel 30V 4A (Ta) 1W (Ta) Surface Mount 3-CPH |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | 3-CPH |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 430pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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CPH3448-TL-W is a metal-oxide-silicon field-effect transistor (MOSFET) designed to provide high current and low voltage response. This MOSFET is a high-efficiency device that gives users the ability to control higher currents with a single MOSFET. It is the latest addition to a series of high-performance technology solutions for switching and power control applications. The CPH3448-TL-W provides a high maximum drain current of 125 amps, and a drain-source voltage rating of 10V, making it suitable for applications that require high currents and low voltages.
Before delving into the working principle of the CPH3448-TL-W, it is key to understand what a MOSFET is and how it works. A MOSFET is a type of transistor that utilizes the flow of electrons through a metal-oxide-semiconductor structure to provide more efficient, high-power control. These devices are made up of a source, a body, a drain, a gate, and two junction layers. The source is the start of the device, while the drain is the end of the device. The source and drain are separated by the body, and a voltage applied to the gate controls the flow of electrons between the source and the drain.
The working principle of the CPH3448-TL-W is that it utilizes the properties of the junction layers to create an efficient transistor. The first junction layer is formed by the source and body, and the second is formed by the body and the drain. When voltage is applied to the gate, a repulsive force is created by the negatively charged electrons in the gate, which pushes the electrons away from the gate and into the body. This allows for the electrons to pass through the first junction layer to the drain, completing the flow of current.
The CPH3448-TL-W MOSFET is used in a variety of applications, primarily as a power switch, as it is capable of controlling high currents without the need for a large voltage input. This makes it a great choice for applications that require efficient power switching and control, such as power converters, DC-DC converters, and motor controllers. Additionally, the MOSFET’s low input voltage requirement and high current rating makes it an ideal choice for a variety of automotive applications, such as power management and motor control systems.
Overall, the CPH3448-TL-W MOSFET is a great choice for the user looking for an efficient switching and power control solution. It offers a low input voltage requirement and a high current rating, making it suitable for a variety of applications. With its efficient design, this MOSFET is an ideal choice for applications that require a high efficiency power switch.
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