| Allicdata Part #: | CPH3215-TL-EOSTR-ND |
| Manufacturer Part#: |
CPH3215-TL-E |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 30V 1.5A CPH3 |
| More Detail: | Bipolar (BJT) Transistor NPN 30V 1.5A 500MHz 900mW... |
| DataSheet: | CPH3215-TL-E Datasheet/PDF |
| Quantity: | 3000 |
| 1 +: | $ 0.06400 |
| 10 +: | $ 0.06208 |
| 100 +: | $ 0.06080 |
| 1000 +: | $ 0.05952 |
| 10000 +: | $ 0.05760 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1.5A |
| Voltage - Collector Emitter Breakdown (Max): | 30V |
| Vce Saturation (Max) @ Ib, Ic: | 225mV @ 15mA, 750mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
| Power - Max: | 900mW |
| Frequency - Transition: | 500MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-96 |
| Supplier Device Package: | 3-CPH |
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The CPH3215-TL-E is a high performance, low power, single bipolar junction transistor (BJT). It is an NPN transistor, with a maximum collector current of 150mA, a maximum collector-emitter voltage of 30V, and a maximum emitter-base voltage of 5V.
The CPH3215-TL-E was designed to provide a wide range of applications. These include, but are not limited to: power switching, small signal amplification, linear amplification, audio amplification and digital logic. This device is ideal for use in applications where high input impedance, high gain, low power consumption, and small package size are required.
The working principle of this device is based on the fact that NPN transistors are current-controlled current sources. Essentially, an NPN transistor functions as a switch, which can be opened and closed depending on an input current. When the input current is increased, the transistor turns on and allows current to flow from its collector to its emitter. As the input current decreases, the transistor turns off and no current flow is observed. This input current is referred to as the base current, and the flow of current from the collector to the emitter is referred to as the collector current.
The physical structure of an NPN transistor consists of two layers of silicon-germanium semiconductor material, separated by an thin, lightly doped layer of semiconductor material. The layers are connected in three regions called the base, collector and emitter. In the CPH3215-TL-E, the base region is connected to the emitter using an integrated aluminium nitride film, while the collector is connected to the emitter using an integrated poly-silicon film. The collector-emitter voltage determines the amount of current that can flow through the device, while the base-emitter voltage determines the gain of the device.
The CPH3215-TL-E is an excellent choice for many applications due to its wide range of features and its low power consumption. The advanced integrated nitride film and poly-silicon films allow for high input impedance, high gain, and low power consumption. In addition, the small package size allows for easy integration into existing systems with limited space. The CPH3215-TL-E can be used for a wide range of applications and is a reliable and cost-effective device for any application requiring a high-performance NPN transistor.
The specific data is subject to PDF, and the above content is for reference
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CPH3215-TL-E Datasheet/PDF