DCX114TU-7-F Allicdata Electronics

DCX114TU-7-F Discrete Semiconductor Products

Allicdata Part #:

DCX114TU-7-FDITR-ND

Manufacturer Part#:

DCX114TU-7-F

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS NPN/PNP SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: DCX114TU-7-F datasheetDCX114TU-7-F Datasheet/PDF
Quantity: 3000
3000 +: $ 0.09605
6000 +: $ 0.09023
15000 +: $ 0.08441
30000 +: $ 0.07742
Stock 3000Can Ship Immediately
$ 0.11
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: DCX114
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): --
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DCX114TU-7-F is a pre-biased array of Bipolar Junction Transistors (BJTs) designed to offer integrated, high-speed control in a variety of applications. It is built up with two transistors, one NPN and one PNP, mounted epitaxially on substrate to provide low-dynamic resistance over a wide range of current ratings. Each transistor is also equipped with a built-in base-to-emitter diode for extra protection against overloads and over-voltage situations.

The DCX114TU-7-F is suitable for use in applications such as speed control circuits, voltage regulators, amplifiers, power converters and drivers. It is also commonly used in temperature control systems, digital signal processing and opto-electronic detection systems.

The DCX114TU-7-F is also a very reliable device and can handle large surge currents while performing at high speed and accuracy. It also has low power consumption and requires minimal external components, making it highly cost-effective and easy to implement in many applications.

The main advantage of the DCX114TU-7-F is its ability to switch quickly between two states, making it ideal for high-speed applications. It also offers a built-in bias point which allows for easy implementation of the desired current range. The DCX114TU-7-F has a high gain bandwidth product which makes it suitable for the use in high-frequency applications.

The working principle of the DCX114TU-7-F relies on the integrated BJTs to operate in either an “ON” or “OFF” state. When in the “ON” state, current flows between the collector and emitter of the device, as it is increased, the junction between the collector and emitter acts as a diode and blocks the forward flow of current. This can then be used to control the current flow in a particular circuit. The amount of current that is able to flow through the device is limited by the amount of base current (or the amount of voltage across the base-emitter junction).

The DCX114TU-7-F can also be used for a variety of applications including switching, modulation, synchronisation, analog to digital conversion, control and regulation. Its fast switching speed and low power consumption make it suitable for use in these applications. Its ability to switch quickly between two states also makes it ideal for use in critical and highly demanding applications such as servo-motors and robotic arms.

The DCX114TU-7-F is a highly versatile device that can be used in a wide range of applications. Its low power consumption and fast switching time make it suitable for use in high-speed applications. Its built-in bias point allows for easy implementation of the desired current range and its high-gain bandwidth product make it suitable for high-frequency applications. The device is highly reliable and can handle large surge currents while performing at high speed and accuracy.

The specific data is subject to PDF, and the above content is for reference

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